Sidewall structured switchable resistor cell
First Claim
1. A method of making a memory device, comprising:
- forming a first conductive electrode;
forming an insulating structure over the first conductive electrode;
forming a resistivity switching element on a sidewall of the insulating structure;
forming a second conductive electrode over the resistivity switching element; and
forming a steering element in series with the resistivity switching element between the first conductive electrode and the second conductive electrode;
wherein a height of the resistivity switching element in a first direction from the first conductive electrode to the second conductive electrode is greater than a thickness of the resistivity switching element in a second direction perpendicular to the first direction.
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Abstract
A method of making a memory device includes forming a first conductive electrode, forming an insulating structure over the first conductive electrode, forming a resistivity switching element on a sidewall of the insulating structure, forming a second conductive electrode over the resistivity switching element, and forming a steering element in series with the resistivity switching element between the first conductive electrode and the second conductive electrode, wherein a height of the resistivity switching element in a first direction from the first conductive electrode to the second conductive electrode is greater than a thickness of the resistivity switching element in second direction perpendicular to the first direction.
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Citations
25 Claims
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1. A method of making a memory device, comprising:
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forming a first conductive electrode; forming an insulating structure over the first conductive electrode; forming a resistivity switching element on a sidewall of the insulating structure; forming a second conductive electrode over the resistivity switching element; and forming a steering element in series with the resistivity switching element between the first conductive electrode and the second conductive electrode; wherein a height of the resistivity switching element in a first direction from the first conductive electrode to the second conductive electrode is greater than a thickness of the resistivity switching element in a second direction perpendicular to the first direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A memory device, comprising:
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a first conductive electrode; an insulating structure; a resistivity switching element located on a sidewall of the insulating structure; a second conductive electrode located over the resistivity switching element; and a steering element located in series with the resistivity switching element between the first conductive electrode and the second conductive electrode; wherein a height of the resistivity switching element in a first direction from the first conductive electrode to the second conductive electrode is greater than a thickness of the resistivity switching element in second direction perpendicular to the first direction. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of making a memory device, comprising
forming a first conductive electrode; -
forming at least one diode layer over the first conductive electrode; forming at least one insulating template layer over the diode layer; forming a hard mask pattern over the template layer; etching the template layer using the hard mask pattern as a mask; reducing a width of the template layer to form an insulating pillar; depositing a metal oxide resistivity switching layer over a sidewall of the insulating pillar; etching the diode layer using the hard mask pattern as a mask to form a pillar diode steering element; and forming a second conductive electrode in contact with the metal oxide resistivity switching layer. - View Dependent Claims (24, 25)
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Specification