PLASMA PROCESSING APPARATUS AND METHOD
First Claim
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1. A plasma processing apparatus, comprising:
- a processing chamber having a gas distribution showerhead and a generally rectangularly shaped backing plate;
one or more power sources coupled to the backing plate at one or more first locations; and
one or more gas sources coupled to the backing plate at three other locations that are each separate from the one or more first locations wherein one of the three locations is disposed at a second location substantially equal distance between two parallel sides of the backing plate.
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Abstract
The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
195 Citations
20 Claims
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1. A plasma processing apparatus, comprising:
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a processing chamber having a gas distribution showerhead and a generally rectangularly shaped backing plate; one or more power sources coupled to the backing plate at one or more first locations; and one or more gas sources coupled to the backing plate at three other locations that are each separate from the one or more first locations wherein one of the three locations is disposed at a second location substantially equal distance between two parallel sides of the backing plate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A plasma enhanced chemical vapor deposition apparatus, comprising:
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a processing chamber having a slit valve opening through at least one wall; a gas distribution showerhead disposed within the processing chamber and spaced from a substrate support; a backing plate disposed behind the gas distribution showerhead and spaced therefrom, the backing plate having three openings therethrough at three locations, wherein one location of the three locations is disposed farther from the slit valve opening than the other two locations; one or more gas sources coupled to the backing plate at the three locations; and one or more RF power source coupled to the backing plate at locations spaced from the three locations. - View Dependent Claims (10, 11, 12, 13)
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14. A method, sequentially comprising:
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introducing processing gas into a chamber through a first location; igniting the processing gas into a plasma; depositing material onto a substrate; introducing cleaning gas into one or more remote plasma source; igniting the cleaning gas into a plasma in the one or more remote plasma sources; and flowing radicals from the remotely ignited cleaning gas plasma into the chamber through the first location and at least a second location separate from the first location. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification