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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20090261325A1
  • Filed: 04/14/2009
  • Published: 10/22/2009
  • Est. Priority Date: 04/16/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device which is a field-effect transistor using a metallic oxide for a channel,wherein said metallic oxide includes a channel region and includes a source region and drain region having a lower oxygen content and higher conductivity than said channel region, andwherein said channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.

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