THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A method for manufacturing a thin film transistor, the method comprising the steps of:
- forming a gate electrode over a substrate having an insulating surface;
forming a gate insulating layer over the gate electrode;
exposing the gate insulating layer to a gas containing nitrogen, allowing a concentration of oxygen in the gate insulating layer to be equal to or lower than 5×
1018 cm−
3 and a concentration of nitrogen in the gate insulating layer to be equal to or higher than 1×
1020 cm−
3 and equal to or lower than 1×
1021 cm−
3;
forming a semiconductor layer over the gate insulating layer;
forming source and drain regions over the semiconductor layer wherein the source and drain regions comprises a semiconductor and an impurity imparting one conductivity type to the semiconductor; and
forming source and drain electrodes over the source and drain regions, respectively.
1 Assignment
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Accused Products
Abstract
Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a channel formation region; and a semiconductor layer including an impurity element imparting one conductivity type. The semiconductor layer exists in a state that a plurality of crystalline particles is dispersed in an amorphous silicon and that the crystalline particles have an inverted conical or inverted pyramidal shape. The crystalline particles grow approximately radially in a direction in which the semiconductor layer is deposited. Vertexes of the inverted conical or inverted pyramidal crystal particles are located apart from an interface between the gate insulating layer and the semiconductor layer.
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Citations
25 Claims
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1. A method for manufacturing a thin film transistor, the method comprising the steps of:
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forming a gate electrode over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode; exposing the gate insulating layer to a gas containing nitrogen, allowing a concentration of oxygen in the gate insulating layer to be equal to or lower than 5×
1018 cm−
3 and a concentration of nitrogen in the gate insulating layer to be equal to or higher than 1×
1020 cm−
3 and equal to or lower than 1×
1021 cm−
3;forming a semiconductor layer over the gate insulating layer; forming source and drain regions over the semiconductor layer wherein the source and drain regions comprises a semiconductor and an impurity imparting one conductivity type to the semiconductor; and forming source and drain electrodes over the source and drain regions, respectively. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a thin film transistor, the method comprising the steps of:
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forming a gate electrode over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode in a treatment chamber; removing the substrate from the treatment chamber; coating an inner wall of the treatment chamber with silicon nitride; providing the substrate into the treatment chamber, allowing a concentration of oxygen in the gate insulating layer to be equal to or lower than 5×
1018 cm−
3 and a concentration of nitrogen in the gate insulating layer to be equal to or higher than 1×
1020 cm−
3 and equal to or lower than 1×
1021 cm−
3;forming a semiconductor layer over the gate insulating layer; forming source and drain regions over the semiconductor layer wherein the source and drain regions comprises a semiconductor and an impurity imparting one conductivity type to the semiconductor; and forming source and drain electrodes over the source and drain regions, respectively. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a thin film transistor, the method comprising the steps of:
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forming a gate electrode over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode; forming a semiconductor layer over the gate insulating layer by using a mixed gas comprising a semiconductor material gas and a nitrogen-containing gas, wherein a concentration of the nitrogen-containing gas is reduced as the formation of the semiconductor layer proceeds; forming source and drain regions over the semiconductor layer wherein the source and drain regions comprises a semiconductor and an impurity imparting one conductivity type to the semiconductor; and forming source and drain electrodes over the source and drain regions, respectively. - View Dependent Claims (16, 17, 18, 19)
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20. A thin film transistor comprising:
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a gate electrode over a substrate having an insulating surface, a gate insulating layer over the gate electrode; a first semiconductor layer on and in contact with the gate insulating layer, the first semiconductor layer has an amorphous structure, a second semiconductor layer which exists in a state that a plurality of crystalline particles is dispersed in the amorphous structure; and a third semiconductor layer having the amorphous structure over the second semiconductor layer, the third semiconductor layer being provided with an impurity, wherein the plurality of crystalline particles have an inverted conical or inverted pyramidal shape whose vertex exists on a side of the substrate. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification