EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS
First Claim
1. A method for fabricating light emitting diode (LED) chips, comprising:
- providing a plurality of LEDs;
coating said LEDs with a conversion material so that at least some light from said LEDs passes through said conversion material and is converted;
measuring the emission characteristics of at least some of said LED chips; and
removing at least some of said conversion material over at least some of said LEDs to alter the emission characteristics of said LED chips such that said LED chips emit within a range of target emission characteristics.
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Accused Products
Abstract
A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.
110 Citations
57 Claims
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1. A method for fabricating light emitting diode (LED) chips, comprising:
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providing a plurality of LEDs; coating said LEDs with a conversion material so that at least some light from said LEDs passes through said conversion material and is converted; measuring the emission characteristics of at least some of said LED chips; and removing at least some of said conversion material over at least some of said LEDs to alter the emission characteristics of said LED chips such that said LED chips emit within a range of target emission characteristics. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A light emitting diode (LED) chip wafer, comprising:
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a plurality of LEDs on a wafer; a conversion material at least partially covering said LEDs with at least some light from said LEDs passing through said conversion material and is converted, said conversion material over at least some of said LEDs is machined so that said at least some of said LED chips emits light having emission characteristics substantially within a range of target emission characteristics. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. A light emitting diode (LED) chip, comprising:
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an LED; and a phosphor coating at least partially covering said LED so that at least some of the light emitted by said LED is converted by said phosphor, said coating machined so that said LED chip emits light having characteristics within a range of target emission characteristics. - View Dependent Claims (45, 46, 47, 48, 49, 50, 51)
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52. A light emitting diode (LED) package comprising:
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an LED chip, comprising an LED and a coating at least partially covering said LED, said coating containing a conversion material and said coating micro-machined so that said LED chip emits light within a deviation from a target emission; package leads in electrical connection with said LED; and encapsulation surrounding said LED chip and electrical connections. - View Dependent Claims (53)
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54. A tool for micro drilling to a sub-micron depth, comprising:
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a mechanical drill; and a nano stage capable of moving an object in relation to said mechanical drill in sub-micron increments, said movement allowing said mechanical drill to form holes in said object at submicron increment depths.
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55. A method for fabricating light emitting diode (LED) chips, comprising:
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providing a plurality of LEDs on a wafer; coating said LEDs with a conversion material so that at least some light from said LEDs passes through said conversion material and is converted; measuring the emission characteristics of at least some of said LED chips; measuring the surface variations for the conversion material coating on said wafer; calculating the amount of conversion material that needs to be removed over at least some of said LEDs based on the measured emission characteristics and surface variation profile, to alter the emission characteristics of said LED chips such that said LED chips emit within a range of target emission characteristics; and removing the calculated amount of conversion material. - View Dependent Claims (56, 57)
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Specification