OPTOELECTRONIC COMPONENT

• US 20090261366A1
• Filed: 09/27/2006
• Published: 10/22/2009
• Est. Priority Date: 09/28/2005
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Linder, Norbert, Eisert, Dominik, Zachau, Martin, Jermann, Frank, Berben, Dirk, Oberschmid, Raimund
• Granted Patent: US 8,598,604 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.

Claims

1. An optoelectronic component with:

a semiconductor body that comprises an active semiconductor layer sequence that is suitable for generating electromagnetic radiation of a first wavelength, which is emitted from a front face of the semiconductor body,

a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and

a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance, which selectively reflects the radiation of the second wavelength and is transparent to radiation of the first wavelength.

2. The optoelectronic component of claim 1, in which the first selectively reflecting layer adjoins the radiation-emitting front face of the semiconductor body.

3. The optoelectronic component of claim 1, in which the first selectively reflecting layer covers a principal surface of the semiconductor body facing the radiation-emitting front face and/or the flanks of the semiconductor body.

4. The optoelectronic component of claim 1, in which the first selectively reflecting layer is monolithically integrated in the radiation-emitting front face of the semiconductor body.

5. The optoelectronic component of claim 1, in which the first selectively reflecting layer is spaced away from the semiconductor body.

6. The optoelectronic component of claim 1, in which the first selectively reflecting layer is also developed beside the semiconductor body.

7. The optoelectronic component of claim 1, in which another reflecting layer is developed beside the semiconductor body.

8. The optoelectronic component of claim 7, in which the other reflecting layer is a metal layer.

9. The optoelectronic component of claim 1 that emits mixed radiation that comprises radiation of the first wavelength and radiation of the second wavelength.

10. The optoelectronic component of claim 1, in which the first wavelength originates from the blue spectral region and the second wavelength originates from the yellow spectral region.

11. The optoelectronic component of claim 1 that comprises a second wavelength conversion substance that converts radiation of the first wavelength into radiation of a third wavelength different from the first and second wavelengths.

12. The optoelectronic component of claim 11, in which the first wavelength originates from the ultraviolet spectral region and the second and third wavelengths originate from the visible spectral region, and the component emits mixed radiation that comprises radiation of the second and third wavelengths.

13. The optoelectronic component of claim 11, in which the first, second, and third wavelengths originate from the visible spectral region and the component emits mixed radiation that comprises radiation of the first, second, and third wavelengths.

14. The optoelectronic component of claim 13, in which the first wavelength originates from the blue spectral region, the second wavelength originates from the red spectral region, and the third wavelength originates from the green spectral region.

15. The optoelectronic component of claim 11, in which the first selectively reflecting layer selectively reflects radiation of the second and third wavelengths and is transparent to radiation of the first wavelength.

16. The optoelectronic component of claim 9, in which the mixed radiation has a color point in the white region of the CIE standard color space.

17. The optoelectronic component of claim 1, in which the semiconductor body is provided with a shell transparent to the radiation of the component.

18. The optoelectronic component of claim 17, in which the shell contains the first and/or the second wavelength conversion substance(s).

19. The optoelectronic component of claim 18, in which the shell comprises a matrix material and particles of the first and/or the second wavelength conversion substance(s), which are embedded in the matrix material of the shell.

20. The optoelectronic component of claim 1, in which the first wavelength conversion substance is contained in a first wavelength conversion layer.

21. The optoelectronic component of claim 11, in which the second wavelength conversion substance is contained in the first wavelength conversion layer or in a second wavelength conversion layer.

22. The optoelectronic component of claim 20, in which the first or the second wavelength conversion layer is located adjoining the semiconductor body.

23. The optoelectronic component claim 20, in which the first or the first and the second wavelength conversion layer(s) is/are spaced away from the semiconductor body.

24. The optoelectronic component pursuant to of claim 23, with a covering element that comprises the first and/or the second wavelength conversion layer(s) and/or the first selectively reflecting layer.

25. The optoelectronic component of claim 24, in which the covering element comprises a carrier substrate.

26. The optoelectronic component of claim 25, in which the carrier substrate contains glass.

27. The optoelectronic component of claim 25, in which the carrier substrate is a film.

28. The optoelectronic component of claim 20, in which the first and/or the second wavelength conversion layer(s) has/have a constant thickness.

29. The optoelectronic component of claim 20, in which the first and/or the second wavelength conversion layer(s) has/have a matrix material and the first and/or the second wavelength conversion substance(s) has/have particles that are embedded in the matrix material of the first/second wavelength conversion layers.

30. The optoelectronic component of claim 19, in which the particles of the first and/or the second wavelength conversion substance(s) are distributed essentially homogeneously in the matrix material of the shell or in the matrix material of the first and optionally the second wavelength conversion layer(s).

31. The optoelectronic component of claim 11 in which the first and the second wavelength conversion substances are located in two regions spatially separated from one another.

32. The optoelectronic component of claim 31, in which the region that contains the first wavelength conversion substance and the region that contains the second wavelength conversion substance follow the radiation-emitting front face of the semiconductor body in the direction of emission of the semiconductor body so that the wavelength into which the radiation of the first wavelength is converted by the particular wavelength conversion substance in each case is shorter, viewed from the semiconductor body in its direction of emission, than the wavelength into which the wavelength conversion substance that precedes it relative to the direction of emission of the semiconductor body converts the first wavelength.

33. The optoelectronic component of claim 1, in which a second selectively reflecting layer follows the first wavelength conversion substance and optionally the second wavelength conversion substance in the direction of emission of the semiconductor body, which selectively reflects a given fraction of the radiation of the first wavelength and is transparent to another fraction of the radiation of the first wavelength and to radiation of the second wavelength, and optionally to radiation of the third wavelength.

34. The optoelectronic component of claim 1, in which a large fraction of the electromagnetic radiation emitted by the active semiconductor layer sequence in operation is emitted perpendicular to the principal dimensional plane of the active semiconductor layer sequence.

35. The optoelectronic component of claim 34, in which the semiconductor body is a thin-film LED chip.

36. The optoelectronic component of claim 1, in which the first selectively reflecting layer (8) and/or the second selectively reflecting layer (16) has/have a layer sequence with dielectric layers that have alternately high and low refractive indices.

37. The optoelectronic component of claim 36, in which the first selectively reflecting layer has high transmissivity for electromagnetic radiation with a wavelength smaller than a limiting wavelength λ

_G and high reflectivity for electromagnetic radiation with a wavelength greater than the limiting wavelength λ

_G.

38. The optoelectronic component of claim 37, in which the limiting wavelength. λ

_G changes with the angle of incidence of the electromagnetic radiation on the first selectively reflecting layer.

39. The optoelectronic component of claim 38, in which the limiting wavelength λ

_G decreases with increasing angle of incidence of the electromagnetic radiation on the first selectively reflecting layer.

40. The optoelectronic component of claim 39, in which the limiting wavelength λ

_G for electromagnetic radiation that strikes the first selectively reflecting layer at an angle of incidence of 45°

is 20 nm more smaller than the limiting wavelength λ

_G for electromagnetic radiation that strikes the first selectively reflecting layer perpendicularly.

41. The optoelectronic component of claim 38, in which

electromagnetic radiation of the first wavelength that is emitted in operation by the active semiconductor layer sequence perpendicular to the principal dimensional plane of the active layer sequence toward the front face of the semiconductor body is transmitted by the first selectively reflecting layer, and

electromagnetic radiation of the first wavelength that strikes the first selectively reflecting layer at an angle is reflected by it.