SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
First Claim
Patent Images
1. A method to form an integrated circuit, the method comprising:
- forming a first portion of an active device;
forming a first portion of a passive device; and
forming a first portion of a memory device;
wherein the first portion of an active device, the first portion of a passive device, or the first portion of a memory device, or combinations thereof, are formed simultaneously or nearly simultaneously.
3 Assignments
0 Petitions
Accused Products
Abstract
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.
31 Citations
10 Claims
-
1. A method to form an integrated circuit, the method comprising:
-
forming a first portion of an active device; forming a first portion of a passive device; and forming a first portion of a memory device; wherein the first portion of an active device, the first portion of a passive device, or the first portion of a memory device, or combinations thereof, are formed simultaneously or nearly simultaneously. - View Dependent Claims (2, 3, 4, 5, 7, 8, 9, 10)
-
-
6. An integrated circuit, comprising:
-
an active device having a first portion; a passive device having a first portion; and a memory device having a first portion; wherein the first portion of the active device, the first portion of the passive device, or the first portion of the memory device, or combinations thereof, are formed simultaneously or nearly simultaneously.
-
Specification