SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

• US 20090261423A1
• Filed: 04/14/2009
• Published: 10/22/2009
• Est. Priority Date: 04/16/2008
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Sawada, Ken
• Granted Patent: US 7,888,751 B2
• Time in Patent Office: Days
• US Class Current: 257/392
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A semiconductor device includes a fin field effect transistor configured to include at least a first fin and a second fin. Threshold voltage of the first fin and threshold voltage of the second fin are different from each other in the fin field effect transistor.

Claims

1. A semiconductor device comprising

a fin field effect transistor configured to include at least a first fin and a second fin, wherein

threshold voltage of the first fin and threshold voltage of the second fin are different from each other in the fin field effect transistor.

2. The semiconductor device according to claim 1, wherein

the first fin and the second fin each extend along a first direction of a substrate plane and are different from each other in width defined in a second direction perpendicular to the first direction.

3. The semiconductor device according to claim 1, wherein

the first fin and the second fin are different from each other in a doping amount of an impurity element in a channel forming region.

4. The semiconductor device according to claim 1, wherein

gate length of the first fin and gate length of the second fin are different from each other.

5. The semiconductor device according to claim 1, wherein

the second fin is provided in plurality, and the first fin and the second fins each extend along a first direction of a substrate plane and are arranged at intervals along a second direction perpendicular to the first direction, and

the first fin and the second fins are arranged symmetrically in the second direction.

6. A method for manufacturing a semiconductor device, the method comprising the step of

forming a fin field effect transistor that includes at least a first fin and a second fin, wherein

in the forming the fin field effect transistor, the first fin and the second fin are so provided that threshold voltage of the first fin and threshold voltage of the second fin are different from each other.