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SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

  • US 20090261446A1
  • Filed: 10/21/2008
  • Published: 10/22/2009
  • Est. Priority Date: 10/26/2007
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • forming at least one recess in a semiconductor layer;

    forming a unidirectional device in and over a first region of the semiconductor layer comprising the at least one recess; and

    forming a bidirectional device in and over a second region of the semiconductor layer.

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