EFFLUENT IMPEDANCE BASED ENDPOINT DETECTION

• US 20090261839A1
• Filed: 01/29/2009
• Published: 10/22/2009
• Est. Priority Date: 03/14/2008
• Status: Abandoned Application

• Current Assignee: Forth-Rite Technologies
• Original Assignee: Forth-Rite Technologies
• Inventors: Lu, Enlian, Cannon, Jerome, Turner, Terry R.
• Application Number:
  US12/361,668
• Publication Number:
  US 20090261839A1
• Time in Patent Office: Days
• US Class Current: 324/459
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

A system to measure an impedance of an effluent associated with a foreline (effluent line or exhaust) is provided. This system includes a remote plasma source, a process chamber, an effluent line, an electrode assembly, an RF driver, and a detector. The remote plasma source couples to the process chambers and is operable to supply chamber-cleaning gas to the process chamber. The effluent line also couples to the process chamber where chamber-cleaning effluent exhausts the process chamber via the effluent line. The electrode assembly, located in the effluent line, is exposed to the effluent exhausting from the process chamber. The electrode assembly, coupled to the RF driver, receives an RF signal from the RF driver. The RF signal applied to the electrode assembly induces a plasma discharge within the electrode assembly and effluent line. A detector coupled to the electrode assembly detects an end point of a chamber clean of the process chamber. The end point may be detected based on a change in impedance associated with the plasma discharge within the electrode assembly and effluent line.

Claims

1. A system operable to measure an impedance of an effluent comprising:

a reactive specie delivery system;

a process chamber coupled to the reactive specie delivery system, the reactive specie delivery system operable to supply reactive species, the reactive species operable to volatilize a film in the process chamber;

an effluent line, wherein volatilized film effluent exhausts the process chamber via the effluent line;

an electrode assembly, located in the effluent line, the electrode exposed to the volatilized film effluent exhausting from the process chamber;

an ionization energy delivery network coupled to the electrode assembly, the ionization energy delivery network operable to apply an ionizing energy signal to the electrode assembly, wherein the ionizing energy signal applied at the electrode assembly induces a plasma discharge within the electrode assembly and effluent line; and

a detector coupled to the electrode assembly, the detector operable to detect an endpoint of a process being performed in the process chamber.

2. The system of claim 1, further comprising:

interface circuitry operably coupled to the reactive specie delivery system, the ionization energy delivery network and the detector, the interface circuitry operable to receive a trigger signal from the reactive specie delivery system, the ionization energy delivery network activated by the trigger signal.

3. The system of claim 1, further comprising:

interface circuitry operably coupled to the reactive specie delivery system, the ionization energy delivery network and the detector, the interface circuitry operable to supply an endpoint signal from the detector to the reactive specie delivery system, the reactive specie delivery system operable to secure the reactive species to the process chamber based on the endpoint signal.

4. The system of claim 1, wherein the process chamber is within a Chemical Vapor Deposition (CVD) tool.

5. The system of claim 1, wherein the CVD tool is operable to deposit a layer of a device selected from the group consisting of a semiconductor device, a textile, a display device and a photo-voltaic device.

6. The system of claim 1, wherein the detector samples at least one parameter selected from the group consisting of:

a voltage of the ionization energy;

a current of the ionization energy;

a phase of the ionization energy;

a delivered Power of the ionization energy;

impedance (Z) of the ionization energy;

resistance (R) of the ionization energy;

reactance (X) of the ionization energy; and

a generator forward or reflected power signal associated with ionization energy.

7. The system of claim 1, wherein the detector samples an impedance of the RF signal.

8. The system of claim 1, wherein the detector comprises processing circuitry operable to determine the endpoint of the process being performed in the process chamber based on at least one parameter selected from the group consisting of:

a voltage of the ionization energy;

a current of the ionization energy;

a phase of the ionization energy;

a delivered Power of the ionization energy;

impedance (Z) of the ionization energy;

resistance (R) of the ionization energy;

reactance (X) of the ionization energy; and

a generator forward or reflected power signal associated with ionization energy.

9. The system of claim 1, wherein the detector interfaces with the reactive specie delivery system, wherein processing circuitry of the reactive specie delivery system is operable to determine the endpoint of the process being performed in the process chamber based on signals supplied by the detector, the signals comprise at least one parameter selected from the group consisting of:

a voltage of the ionization energy;

a current of the ionization energy;

a phase of the ionization energy;

a delivered Power of the ionization energy;

impedance (Z) of the ionization energy;

resistance (R) of the ionization energy;

reactance (X) of the ionization energy; and

a generator forward or reflected power signal associated with ionization energy.

10. The system of claim 1, wherein the a process tool comprising the process chamber and coupled to the detector comprises processing circuitry operable to determine the endpoint of the process being performed in the process chamber based on signals supplied by the detector, the signals comprise at least one parameter selected from the group consisting of:

a voltage of the ionization energy;

a current of the ionization energy;

a phase of the ionization energy;

a delivered Power of the ionization energy;

impedance (Z) of the ionization energy;

resistance (R) of the ionization energy;

reactance (X) of the ionization energy; and

a generator forward or reflected power signal associated with ionization energy.

11. A method comprising:

coupling a remote plasma source to a process chamber;

supplying chamber cleaning gas from the remote plasma source to the process chamber;

exhausting chamber cleaning effluent from the process chamber via an effluent line;

exposing an electrode assembly, located in the effluent line, to the chamber cleaning effluent exhausting from the process chamber;

applying an RF signal to the electrode assembly, wherein the RF signal applied at the electrode assembly induces a plasma discharge within the electrode assembly and effluent line;

sampling at least one parameter associated with the plasma discharge within the electrode assembly and effluent line; and

determining an endpoint of a chamber clean based on the at least one parameter associated with the plasma discharge.

12. The method of claim 11, further comprising:

initiating the RF signal with a trigger signal from the remote plasma source.

13. The method of claim 11, further comprising:

securing the chamber clean based on the determined endpoint.

14. The method of claim 11, wherein securing the chamber clean based on the determined endpoint further comprises:

securing supplying chamber cleaning gas from the remote plasma source to the process chamber; and

securing the RF signal applied to the electrode assembly, wherein securing the RF signal applied to the electrode assembly terminates the plasma discharge within the electrode assembly and effluent line.

15. The method of claim 11, wherein the process chamber is within a Chemical Vapor Deposition (CVD) tool.

16. The method of claim 11, wherein the CVD tool is operable to deposit a layer of a device selected from the group consisting of a semiconductor device, a display device, textile, and a photo-voltaic device.

17. The method of claim 11, wherein sampling at least one parameter associated with the plasma discharge within the electrode assembly and effluent line comprises sampling at least one parameter selected from the group consisting of:

a voltage of the ionization energy;

a current of the ionization energy;

a phase of the ionization energy;

a delivered Power of the ionization energy;

impedance (Z) of the ionization energy;

resistance (R) of the ionization energy;

reactance (X) of the ionization energy; and

a generator forward or reflected power signal associated with ionization energy.

18. The method of claim 11, wherein processing circuitry within a process tool coupled to a detector operable to sample the at least one parameter associated with the plasma discharge within the electrode assembly and effluent line is operable to determine the endpoint of the chamber clean based on signals supplied by the detector.

19. The method of claim 11, wherein processing circuitry within a detector operable to sample the at least one parameter associated with the plasma discharge within the electrode assembly and effluent line is operable to determine the endpoint of the chamber clean based on signals supplied by the detector, the detector operable to interface with a process tool and supply an endpoint signal.

20. The method of claim 11, wherein the at least one parameter associated with the plasma discharge comprises an impedance.

21. A device comprising:

a substrate;

at least one deposited layer on the substrate, the at least one deposited layers processed within a chemical vapor deposition (CVD) process chamber of a CVD process tool,

the process chamber cleaned with chamber cleaning gas supplied from a remote plasma source coupled to the CVD process chamber, an endpoint of the chamber clean determined by detection circuitry located in a foreline coupled to the CVD process chamber, the foreline operable to exhaust chamber cleaning effluent from the CVD process chamber, the detection circuitry operable to induce and sample a plasma discharge within the chamber cleaning effluent within the foreline.

22. The device of claim 21, the device comprising at least on device selected from the group consisting of:

a semiconductor device;

a display device;

a photo-voltaic device; and

a textile product.

23. An endpoint detector comprising:

an electrode assembly, located in an effluent line, the electrode exposed to the effluent exhausting from the process chamber;

an RF driver coupled to the electrode assembly, the RF driver operable to apply an RF signal to the electrode assembly, wherein the RF signal applied at the electrode assembly induces a plasma discharge within the electrode assembly and effluent line; and

detection circuitry coupled to the electrode assembly, the detection circuitry operable to;

sample the plasma discharge within the electrode assembly and effluent line; and

determine an endpoint of an etch process based on the sampled plasma discharge.

24. The endpoint detector of claim 23, further comprising:

interface circuitry operably coupled to a remote plasma source, the RF driver and the detection circuitry, the interface circuitry operable;

to receive a trigger signal from the remote plasma source, the RF signal initiated by the RF driver based on the trigger signal; and

supply an endpoint signal from the detection circuitry to the reactive specie source, the reactive specie source operable to secure the reactive specie to the process chamber based on the endpoint signal.

25. The endpoint detector of claim 23, wherein the etch processes comprises:

a chamber clean;

a film removal;

or

a layer etch.

26. An endpoint detector comprising:

an electrode assembly, located in an effluent line, the electrode exposed to the effluent exhausting from the process chamber;

an RF driver coupled to the electrode assembly, the RF driver operable to apply an RF signal to the electrode assembly, wherein the RF signal applied at the electrode assembly induces a plasma discharge within the electrode assembly and effluent line; and

detection circuitry coupled to the electrode assembly, the detection circuitry operable to;

sample the plasma discharge within the electrode assembly and effluent line;

interface circuitry operably coupled to a process tool, a remote plasma source, the RF driver and the detection circuitry, the interface circuitry operable;

to receive a trigger signal from the remote plasma source, the RF signal initiated by the RF driver based on the trigger signal; and

supply sample signals based on the plasma discharge to processing circuitry within the process tool, the processing circuitry operable to determine an endpoint signal from the sample signals, the processing circuitry operable to secure the reactive specie to the process chamber based on the endpoint signal.

27. A system operable to measure an impedance of a volatilized film effluent comprising:

a reactive specie delivery system;

a process chamber coupled to the reactive specie delivery system, the reactive specie delivery system operable to supply reactive species, the reactive species operable to volatilize a film in the process chamber;

an electrode assembly, the electrode exposed to the volatilized film effluent within the process chamber;

an ionization energy delivery network coupled to the electrode assembly, the ionization energy delivery network operable to apply an ionizing energy signal to the electrode assembly, wherein the ionizing energy signal applied at the electrode assembly induces a plasma discharge proximate to the electrode assembly; and

a detector coupled to the electrode assembly, the detector operable to detect a change in a chemical composition of the volatilized film effluent in the process chamber.

28. A system operable to measure an impedance of a volatilized chemistry comprising:

a reactive specie delivery system;

a process chamber coupled to the reactive specie delivery system, the reactive specie delivery system operable to supply reactive species, the reactive species operable to volatilize in the process chamber;

an electrode assembly, the electrode exposed to the volatilized chemistry within the process chamber;

an ionization energy delivery network coupled to the electrode assembly, the ionization energy delivery network operable to apply an ionizing energy signal to the electrode assembly, wherein the ionizing energy signal applied at the electrode assembly induces a plasma discharge proximate to the electrode assembly; and

a detector coupled to the electrode assembly, the detector operable to detect a change in a chemical composition of the volatilized chemistry in the process chamber.