High-Voltage Light Emitting Diode Circuit Having a Plurality of Critical Voltages and Light Emitting Diode Device Using the Same

• US 20090262527A1
• Filed: 04/16/2009
• Published: 10/22/2009
• Est. Priority Date: 04/18/2008
• Status: Abandoned Application

• Current Assignee: Top Crystals Technology Company Limited
• Original Assignee: Top Crystals Technology Company Limited
• Inventors: CHOU, Ming Huang
• Application Number:
  US12/424,778
• Publication Number:
  US 20090262527A1
• Time in Patent Office: Days
• US Class Current: 362/231
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H05B 45/30 Driver circuits

Abstract

A high-voltage light emitting diode (LED) circuit having a plurality of critical voltages and an LED device using the same are described. The high-voltage LED circuit includes a first substrate, at least a first LED formed on the first substrate, and at least an impedance element formed on the first substrate and electrically connected in series with one end of the first LED. The first LED is connected in parallel with at least a second LED based on the characteristics of the impedance element, and the second LED has a polarity opposite to that of the first LED, such that the high-voltage LED circuit may be operated in an AC power supply environment, thereby improving the convenience of using the LEDs.

Claims

1. A high-voltage light emitting diode (LED) chip having an impedance element, comprising:

a first substrate;

at least a first LED, formed on the first substrate; and

at least an impedance element, formed on the first substrate and electrically connected in series with one end of the first LED.

2. The high-voltage LED chip having an impedance element according to claim 1, wherein the first LED has a multiple quantum well (MQW) structure.

3. The high-voltage LED chip having an impedance element according to claim 2, wherein the LED having the MQW structure further has an electron blacking layer structure.

4. The high-voltage LED chip having an impedance element according to claim 1, wherein the impedance element is a diode element or a resistance element.

5. The high-voltage LED chip having an impedance element according to claim 4, wherein the diode element is a semiconductor pn junction, a Schockley diode, a semiconductor heterojunction, an organic electro-luminescent material, or a polymer electro-luminescent material.

6. The high-voltage LED chip having an impedance element according to claim 4, wherein the resistance element is an Ohmic contact resistance or a thin-film wire resistance.

7. The high-voltage LED chip having an impedance element according to claim 1, further comprising:

at least a second LED formed on the first substrate, wherein the second LED has a polarity opposite to that of the first LED and is connected in parallel with the first LED, and the impedance element is formed on the first substrate and electrically connected in series with one end of the second LED.

8. A submount high-voltage light emitting diode (LED) chip, comprising:

a second substrate, formed with a plurality of wires;

at least an LED chip, formed on the second substrate, the LED chip comprising;

a first substrate; and

at least a first LED, formed on the first substrate and electrically connected to the wires; and

at least an impedance element, formed on the second substrate, electrically connected to the wires, and electrically connected in series with one side of the first LED.

9. The submount high-voltage LED chip according to claim 8, wherein the second substrate is selected from a group consisting of a printed circuit board (PCB), a silicon substrate, and a ceramic material.

10. The submount high-voltage LED chip according to claim 9, wherein the ceramic material is selected from a group consisting of Al₂O₃, AlN, BeO, low-temperature co-fired ceramic (LTCC), and high-temperature co-fired ceramic (HTCC).

11. The submount high-voltage LED chip according to claim 8, wherein the LED has a multiple quantum well (MQW) structure.

12. The submount high-voltage LED chip according to claim 11, wherein the LED having the MQW structure further has an electron blacking layer structure.

13. The submount high-voltage LED chip according to claim 8, wherein the impedance element is a diode element or a resistance element.

14. The submount high-voltage LED chip according to claim 13, wherein the diode element is a semiconductor pn junction, a Schockley diode, a semiconductor heterojunction, an organic electro-luminescent material, or a polymer electro-luminescent material.

15. The submount high-voltage LED chip according to claim 13, wherein the resistance element is an Ohmic contact resistance or a thin-film wire resistance.

16. The submount high-voltage LED chip according to claim 8, further comprising:

at least a second LED formed on the first substrate or the second substrate, wherein the second LED has a polarity opposite to that of the first LED and is electrically connected in parallel with the first LED, and the impedance element is formed on the second substrate, electrically connected to the wires, and electrically connected in series with one side of the second LED.

17. A light emitting diode (LED) device, comprising:

a base structure, comprising;

a body, wherein a chip base is formed in the body; and

at least two lead frames, separated from each other and having no electrical connection, wherein the lead frames are fixed on the body;

at least a high-voltage LED chip having an impedance element, comprising;

a first substrate, fixed in the chip base;

at least a first LED, formed on the first substrate, wherein one end of the first LED is electrically connected to one lead frame via a first wire; and

at least an impedance element, formed on the first substrate, wherein one end of the impedance element is electrically connected in series with the other end of the first LED, and the other end of the impedance element is electrically connected to the other lead frame via a second wire;

a light-receiving layer, covered on the high-voltage LED chip connected to the wires in the chip base; and

a lens, bonded to the body and covered on the chip base.

18. The LED device according to claim 17, wherein the high-voltage LED chip having an impedance element further comprises at least a second LED, formed on the first substrate, having a polarity opposite to that of the first LED, and connected in parallel with the first LED.

19. The LED device according to claim 17, wherein the high-voltage LED chip having an impedance element is capable of emitting at least two colors of light, and a diffusion powder is further blended in the light-receiving layer covered on the high-voltage LED chip having an impedance element.

20. The LED device according to claim 17, wherein the high-voltage LED chip having an impedance element is a high-voltage LED chip having an impedance element that emits a blue light, and an optical-wave conversion layer is further formed on the light-receiving layer covered on the high-voltage LED chip having an impedance element.