SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A manufacturing method of a semiconductor device, comprising the steps of:
- forming an embrittlement region in a single crystal semiconductor substrate;
attaching and fixing the single crystal semiconductor substrate to a substrate;
generating a crack in the embrittlement region by heating the single crystal semiconductor substrate, thereby separating from a part of the single crystal semiconductor substrate to form a semiconductor layer, wherein the semiconductor layer is attached to the substrate;
irradiating the semiconductor layer with a laser beam to recrystallize the semiconductor layer;
forming a first island-shaped semiconductor layer and a second island-shaped semiconductor layer from the semiconductor layer, wherein a thickness of the first island-shaped semiconductor layer is thinner than a thickness of the second island-shaped semiconductor layer;
adding an impurity element imparting n-type conductivity into part of the first island-shaped semiconductor layer to form a source region and a drain region; and
adding an impurity element imparting p-type conductivity into part of the second island-shaped semiconductor layer to form a source region and a drain region.
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Accused Products
Abstract
A single crystal semiconductor substrate including an embrittlement layer is attached to a base substrate with an insulating layer interposed therebetween, and the single crystal semiconductor layer is separated at the embrittlement layer by heat treatment; accordingly, a single crystal semiconductor layer is fixed over the base substrate. The single crystal semiconductor layer is irradiated with a laser beam so that the single crystal semiconductor layer is partially melted and then is re-single crystallized, whereby crystal defects are removed. In addition, an island-shaped single crystal semiconductor layer for forming an n-channel transistor is channel-doped using a photomask and then is etched back using the photomask so that the island-shaped single crystal semiconductor layer for forming an n-channel transistor is thinner than the island-shaped single crystal semiconductor layer for forming a p-channel transistor.
233 Citations
19 Claims
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1. A manufacturing method of a semiconductor device, comprising the steps of:
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forming an embrittlement region in a single crystal semiconductor substrate; attaching and fixing the single crystal semiconductor substrate to a substrate; generating a crack in the embrittlement region by heating the single crystal semiconductor substrate, thereby separating from a part of the single crystal semiconductor substrate to form a semiconductor layer, wherein the semiconductor layer is attached to the substrate; irradiating the semiconductor layer with a laser beam to recrystallize the semiconductor layer; forming a first island-shaped semiconductor layer and a second island-shaped semiconductor layer from the semiconductor layer, wherein a thickness of the first island-shaped semiconductor layer is thinner than a thickness of the second island-shaped semiconductor layer; adding an impurity element imparting n-type conductivity into part of the first island-shaped semiconductor layer to form a source region and a drain region; and adding an impurity element imparting p-type conductivity into part of the second island-shaped semiconductor layer to form a source region and a drain region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A manufacturing method of a semiconductor device, comprising the steps of:
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forming an embrittlement region in a single crystal semiconductor substrate; attaching and fixing the single crystal semiconductor substrate to a substrate; generating a crack in the embrittlement region by heating the single crystal semiconductor substrate, thereby separating from a part of the single crystal semiconductor substrate to form a semiconductor layer, wherein the semiconductor layer is attached to the substrate; irradiating the semiconductor layer with a laser beam to recrystallize the semiconductor layer; separating the semiconductor layer into a first island-shaped semiconductor layer and a second island-shaped semiconductor layer; etching the first island-shaped semiconductor layer by using a mask, so that a thickness of the first island-shaped semiconductor layer is thinner than a thickness of the second island-shaped semiconductor layer; adding an impurity element imparting n-type conductivity into part of the first island-shaped semiconductor layer to form a source region and a drain region by using the mask; and adding an impurity element imparting p-type conductivity into part of the second island-shaped semiconductor layer to form a source region and a drain region. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A manufacturing method of a semiconductor device, comprising the steps of:
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forming an embrittlement region in a single crystal semiconductor substrate; attaching and fixing the single crystal semiconductor substrate to a substrate; generating a crack in the embrittlement region by heating the single crystal semiconductor substrate, thereby separating from a part of the single crystal semiconductor substrate to form a semiconductor layer, wherein the semiconductor layer is attached to the substrate; irradiating the semiconductor layer with a laser beam to recrystallize the semiconductor layer; separating the semiconductor layer into a first island-shaped semiconductor layer and a second island-shaped semiconductor layer; etching the first island-shaped semiconductor layer by using a first mask, so that a thickness of the first island-shaped semiconductor layer is thinner than a thickness of the second island-shaped semiconductor layer; forming a gate insulating film over the first island-shaped semiconductor layer and the second island-shaped semiconductor layer; forming a first electrode over the first island-shaped semiconductor layer and a second electrode over the second island-shaped semiconductor layer; adding an impurity element imparting n-type conductivity into part of the first island-shaped semiconductor layer to form a source region and a drain region by using the first mask and the first electrode as a second mask; and adding an impurity element imparting p-type conductivity into part of the second island-shaped semiconductor layer to form a source region and a drain region by using the second electrode as a third mask. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification