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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20090263942A1
  • Filed: 04/09/2009
  • Published: 10/22/2009
  • Est. Priority Date: 04/18/2008
  • Status: Active Grant
First Claim
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1. A manufacturing method of a semiconductor device, comprising the steps of:

  • forming an embrittlement region in a single crystal semiconductor substrate;

    attaching and fixing the single crystal semiconductor substrate to a substrate;

    generating a crack in the embrittlement region by heating the single crystal semiconductor substrate, thereby separating from a part of the single crystal semiconductor substrate to form a semiconductor layer, wherein the semiconductor layer is attached to the substrate;

    irradiating the semiconductor layer with a laser beam to recrystallize the semiconductor layer;

    forming a first island-shaped semiconductor layer and a second island-shaped semiconductor layer from the semiconductor layer, wherein a thickness of the first island-shaped semiconductor layer is thinner than a thickness of the second island-shaped semiconductor layer;

    adding an impurity element imparting n-type conductivity into part of the first island-shaped semiconductor layer to form a source region and a drain region; and

    adding an impurity element imparting p-type conductivity into part of the second island-shaped semiconductor layer to form a source region and a drain region.

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