INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME

• US 20090266590A1
• Filed: 06/02/2009
• Published: 10/29/2009
• Est. Priority Date: 11/06/2007
• Status: Abandoned Application

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: AOI, Nobuo
• Application Number:
  US12/476,794
• Publication Number:
  US 20090266590A1
• Time in Patent Office: Days
• US Class Current: 174/257
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 2221/1094 Conducting structures comprising nanotubes or nanowires
• CPC Class Codes: H01L 23/53276 containing carbon, e.g. fullerenes superconducting fullerenes H10N60/853
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 3/4038 Through-connections; Vertical interconnect access [VIA] connections H05K3/403, H05K3/42 take precedence

Abstract

An interconnect structure includes: an interlayer insulating film formed on a lower metal layer; a contact hole formed in the interlayer insulating film to expose the lower metal layer; a plurality of carbon nanotubes formed on a bottom of the contact hole; an wiring metal filled in the contact hole to fill gap between the plurality of carbon nanotubes; and an upper wiring formed above the contact hole. A Ti layer is formed between the plurality of carbon nanotubes and the upper wiring.

Claims

1. An interconnect structure comprising:

an interlayer insulating film formed on a lower metal layer;

a contact hole formed in the interlayer insulating film to expose the lower metal layer;

a plurality of carbon nanotubes formed on a bottom of the contact hole;

an wiring metal filled in the contact hole to fill gap between the plurality of carbon nanotubes; and

an upper wiring formed above the contact hole, wherein

an upper metal layer made of a Ti layer at the bottom of Cu wiring is formed between the plurality of carbon nanotubes and the upper wiring.

2. The interconnect structure of claim 1, further comprising:

a lower metal layer which is made of a Ti layer and formed on at least the bottom of the contact hole to present between the lower metal layer and bottom ends of the plurality of carbon nanotubes.

3. The interconnect structure of claim 1, wherein the upper metal layer is formed on at least top ends of the plurality of carbon nanotubes.

4. The interconnect structure of claim 1, wherein

the upper metal layer is connected to at least the top ends of the plurality of carbon nanotubes and covers a bottom surface of the upper wiring.

6. The interconnect structure of claim 1, wherein

the carbon nanotubes have a multiwall structure.

7. The interconnect structure of claim 1, wherein

the wiring metal is copper.

15. The interconnect structure of claim 2, wherein the upper metal layer is formed on at least top ends of the plurality of carbon nanotubes.

16. The interconnect structure of claim 2, wherein

the upper metal layer is connected to at least the top ends of the plurality of carbon nanotubes and covers a bottom surface of the upper wiring.

5. An interconnect structure comprising:

an interlayer insulating film formed on a lower metal layer;

a contact hole formed in the interlayer insulating film to expose the lower metal layer;

a lower metal layer made of a Ti layer on Cu wiring and formed on at least a bottom of the contact hole;

a plurality of carbon nanotubes formed on the lower metal layer on the bottom of the contact hole; and

an wiring metal filled in the contact hole to fill gap between the plurality of carbon nanotubes.

8. A method for fabricating an interconnect structure comprising:

(a) forming an interlayer insulating film on a lower metal layer;

(b) forming a contact hole in the interlayer insulating film to expose the lower metal layer;

(c) forming a plurality of carbon nanotubes on a bottom of the contact hole, and filling with an wiring metal in the contact hole to fill gap between the plurality of carbon nanotubes; and

(d) forming an upper wiring above the contact hole after the formation (c);

wherein

an upper metal layer made of a Ti layer at the bottom of Cu wiring is formed between the plurality of carbon nanotubes and the upper wiring.

9. The method of claim 8, further comprising:

(e) forming a lower metal layer made of a Ti layer on Cu wiring on at least the bottom of the contact hole between the forming the contact hole and the forming the plurality of carbon nanotubes and filling with the wiring metal.

10. The method of claim 8, wherein

the forming the plurality of carbon nanotubes and filling with the wiring metal includes:

forming the plurality of carbon nanotubes so that top ends thereof do not protrude from the contact hole;

forming the upper metal layer on at least top ends of the plurality of carbon nanotubes; and

then filling with the wiring metal.

11. The method of claim 8, wherein

the forming the plurality of carbon nanotubes and filling with the wiring metal includes:

forming the plurality of carbon nanotubes so that top ends thereof protrude from the contact hole; and

then filling with the wiring metal; and

the method further comprising;

(f) removing part of the top ends of the plurality of carbon nanotubes protruding from the contact hole to planarize a top of the contact hole between the forming the plurality of carbon nanotubes and filling with the wiring metal and the forming the upper wiring; and

(g) forming the upper metal layer on the contact hole to be connected to the plurality of carbon nanotubes after the removing the part of the top ends of the plurality of carbon nanotubes and the forming the upper wiring.

13. The method of claim 8, wherein

the carbon nanotubes have a multiwall structure.

14. The method of claim 8, wherein

the wiring metal is copper.

17. The method of claim 9, wherein

the forming the plurality of carbon nanotubes and filling with the wiring metal includes:

forming the plurality of carbon nanotubes so that top ends thereof do not protrude from the contact hole;

forming the upper metal layer on at least top ends of the plurality of carbon nanotubes; and

then filling with the wiring metal.

18. The method of claim 9, wherein

the forming the plurality of carbon nanotubes and filling with the wiring metal includes:

forming the plurality of carbon nanotubes so that top ends thereof protrude from the contact hole; and

then filling with the wiring metal; and

the method further comprising;

(f) removing part of the top ends of the plurality of carbon nanotubes protruding from the contact hole to planarize a top of the contact hole between the forming the plurality of carbon nanotubes and filling with the wiring metal and the forming the upper wiring; and

(g) forming the upper metal layer on the contact hole to be connected to the plurality of carbon nanotubes after the removing the part of the top ends of the plurality of carbon nanotubes and the forming the upper wiring.

12. A method for fabricating an interconnect structure comprising:

(a) forming an interlayer insulating film on a lower metal layer;

(b) forming a contact hole in the interlayer insulating film to expose the lower metal layer;

(c) forming a lower metal layer made of a Ti layer on Cu wiring on at least a bottom of the contact hole; and

(d) forming a plurality of carbon nanotubes on the lower metal layer on the bottom of the contact hole, and then filling with an wiring metal in the contact hole to fill gap between the plurality of carbon nanotubes.