WAVELENGTH-SENSITIVE DETECTOR WITH ELONGATE NANOSTRUCTURES
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Abstract
A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device.
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Citations
65 Claims
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1. (canceled)
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4. (canceled)
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14. A wavelength-sensitive detector comprising a first photoconductor unit and a second photoconductor unit on a substrate;
- wherein the first photoconductor unit has a first bandgap and the second photoconductor unit has a second bandgap different from the first bandgap;
wherein a plane of the first photoconductor unit and a plane of the second photoconductor unit are substantially parallel to each other and are substantially perpendicular to a plane of the substrate;
wherein each photoconductor unit comprises a first electrode having a first longitudinal direction and a first sidewall lying in a first plane parallel with the first longitudinal direction and a second electrode having a second longitudinal direction and a second sidewall lying in a second plane parallel with said second longitudinal direction;
wherein the first photoconductor unit comprises a plurality of first type elongated nanostructures positioned in between the first electrode and the second electrode of the first photoconductor unit, the elongated nanostructures each having a longitudinal axis, wherein the longitudinal axes of the first type elongated nanostructures are substantially parallel to each other and are substantially perpendicular to a plane of the first electrode and a plane of the second electrode of the first photoconductor unit; and
wherein the second photoconductor unit comprises a plurality of second type elongated nanostructures positioned in between the first electrode and the second electrode of the second photoconductor unit, the elongated nanostructures each having a longitudinal axis, wherein the longitudinal axes of the second type elongated nanostructures are substantially parallel to each other and are substantially perpendicular to a plane of the first electrode and a plane of the second electrode of the second photoconductor unit, wherein the first type elongated nanostructures are of a first material, and a first diameter and a first length, and wherein the second type elongated nanostructures are of a second material, and a second diameter and a second length, wherein at least one of the first material, the first diameter, and the first length is different from the second material, the second diameter, and the second length, wherein the first photoconductor unit is situated in between the substrate and the second photoconductor unit, and wherein the first type elongated nanostructures have a larger bandgap than the second type elongated nanostructures. - View Dependent Claims (2, 3, 5, 6, 7, 8, 9, 10, 11, 12, 13, 16, 17, 19, 20, 28, 30)
- wherein the first photoconductor unit has a first bandgap and the second photoconductor unit has a second bandgap different from the first bandgap;
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15. A wavelength-sensitive detector comprising a first photoconductor unit and a second photoconductor unit on a substrate;
- wherein the first photoconductor unit has a first bandgap and the second photoconductor unit has a second bandgap different from the first bandgap;
wherein a plane of the first photoconductor unit and a plane of the second photoconductor unit are substantially parallel to each other and are substantially perpendicular to a plane of the substrate;
wherein each photoconductor unit comprises a first electrode having a first longitudinal direction and a first sidewall lying in a first plane parallel with the first longitudinal direction and a second electrode having a second longitudinal direction and a second sidewall lying in a second plane parallel with said second longitudinal direction;
wherein the first photoconductor unit comprises a plurality of first type elongated nanostructures positioned in between the first electrode and the second electrode of the first photoconductor unit, the elongated nanostructures each having a longitudinal axis, wherein the longitudinal axes of the first type elongated nanostructures are substantially parallel to each other and are substantially perpendicular to a plane of the first electrode and a plane of the second electrode of the first photoconductor unit; and
wherein the second photoconductor unit comprises a plurality of second type elongated nanostructures positioned in between the first electrode and the second electrode of the second photoconductor unit, the elongated nanostructures each having a longitudinal axis, wherein the longitudinal axes of the second type elongated nanostructures are substantially parallel to each other and are substantially perpendicular to a plane of the first electrode and a plane of the second electrode of the second photoconductor unit, wherein the first type elongated nanostructures are of a first material, a first diameter and a first length, and wherein the second type elongated nanostructures are of a second material, a second diameter and a second length, wherein at least one of the first material, the first diameter, and the first length is different from the second material, the second diameter, and the second length, wherein the second photoconductor unit is situated on top of the first photoconductor unit, the second photoconductor unit comprising a plurality of second type elongated nanostructures oriented in a direction substantially perpendicular to a direction of the plurality of first type elongated nanostructures in the first photoconductor unit. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
- wherein the first photoconductor unit has a first bandgap and the second photoconductor unit has a second bandgap different from the first bandgap;
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18. A wavelength-sensitive detector comprising a first photoconductor unit and a second photoconductor unit on a substrate;
- wherein the first photoconductor unit has a first bandgap and the second photoconductor unit has a second bandgap different from the first bandgap;
wherein a plane of the first photoconductor unit and a plane of the second photoconductor unit are substantially parallel to each other and are substantially perpendicular to a plane of the substrate;
wherein each photoconductor unit comprises a first electrode having a first longitudinal direction and a first sidewall lying in a first plane parallel with the first longitudinal direction and a second electrode having a second longitudinal direction and a second sidewall lying in a second plane parallel with said second longitudinal direction;
wherein the first photoconductor unit comprises a plurality of first type elongated nanostructures positioned in between the first electrode and the second electrode of the first photoconductor unit, the elongated nanostructures each having a longitudinal axis, wherein the longitudinal axes of the first type elongated nanostructures are substantially parallel to each other and are substantially perpendicular to a plane of the first electrode and a plane of the second electrode of the first photoconductor unit; and
wherein the second photoconductor unit comprises a plurality of second type elongated nanostructures positioned in between the first electrode and the second electrode of the second photoconductor unit, the elongated nanostructures each having a longitudinal axis, wherein the longitudinal axes of the second type elongated nanostructures are substantially parallel to each other and are substantially perpendicular to a plane of the first electrode and a plane of the second electrode of the second photoconductor unit, wherein the first type elongated nanostructures are of a first material, a first diameter and a first length, and wherein the second type elongated nanostructures are of a second material, a second diameter and a second length, wherein at least one of the first material, the first diameter, and the first length is different from the second material, the second diameter, and the second length, wherein the detector is configured to determine a polarization of incident radiation, and wherein the detector comprises at least a first photoconductor unit and a second photoconductor unit, the first photoconductor unit comprising first type elongated nanostructures oriented in a first direction and a second photoconductor unit comprising second type elongated nanostructures oriented in a second direction, wherein the first direction and the second direction are substantially perpendicular to each other. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65)
- wherein the first photoconductor unit has a first bandgap and the second photoconductor unit has a second bandgap different from the first bandgap;
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21-27. -27. (canceled)
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29. (canceled)
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31. (canceled)
Specification