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MOSFET with Integrated Field Effect Rectifier

  • US 20090267111A1
  • Filed: 04/28/2009
  • Published: 10/29/2009
  • Est. Priority Date: 09/26/2007
  • Status: Active Grant
First Claim
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1. In a metal oxide semiconductor field effect transistor (MOSFET) structure having a gate, a source, and a drain, wherein the current flow between the source and the drain is controlled by the voltage applied to the gate, the improvement comprisinga field effect rectifier connected between the source and the drain and serving to shunt current therethrough during switching of the MOSFET.

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