×

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

  • US 20090267152A1
  • Filed: 07/01/2009
  • Published: 10/29/2009
  • Est. Priority Date: 09/21/2005
  • Status: Active Grant
First Claim
Patent Images

1. A device comprising:

  • a first layer comprising a semiconductor material having a major surface;

    a conductive gate structure overlying the first layer major surface at a first location;

    an isolation material at a second location, the isolation material comprising a surface recessed substantially below the first layer major surface; and

    an epitaxial layer on the first layer major surface between the first location and the second location and on a sidewall of the first layer abutting the isolation material.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×