SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
First Claim
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1. A device comprising:
- a first layer comprising a semiconductor material having a major surface;
a conductive gate structure overlying the first layer major surface at a first location;
an isolation material at a second location, the isolation material comprising a surface recessed substantially below the first layer major surface; and
an epitaxial layer on the first layer major surface between the first location and the second location and on a sidewall of the first layer abutting the isolation material.
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Abstract
A semiconductor device is disclosed having a conductive gate structure overlying a semiconductor layer having a major surface. An isolation material is recessed within a trench region below the major surface of the semiconductor layer. An epitaxial layer is formed overlying a portion of the major surface and on an active region forming a sidewall of the trench.
72 Citations
20 Claims
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1. A device comprising:
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a first layer comprising a semiconductor material having a major surface; a conductive gate structure overlying the first layer major surface at a first location; an isolation material at a second location, the isolation material comprising a surface recessed substantially below the first layer major surface; and an epitaxial layer on the first layer major surface between the first location and the second location and on a sidewall of the first layer abutting the isolation material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 19, 20)
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12. A method comprising:
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forming an opening for a shallow trench isolation (STI) feature to form an exposed sidewall portion of an active region of a semiconductor layer; forming an epitaxial layer overlying a major surface of the semiconductor layer and the exposed sidewall portion; and forming a silicide at the epitaxial layer overlying the major surface and the exposed sidewall portion. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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Specification