SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
Patent Images
1. A semiconductor device comprising:
- a semiconductor integrated circuit between a first layer and a second layer; and
a first organic layer between the semiconductor integrated circuit and the first layer,wherein the first layer comprises a fibrous body and an organic resin,wherein the second layer comprises a fibrous body and an organic resin, andwherein the first organic layer has a lower modulus of elasticity and higher breaking strength than the first layer and the second layer.
1 Assignment
0 Petitions
Accused Products
Abstract
In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.
326 Citations
34 Claims
-
1. A semiconductor device comprising:
-
a semiconductor integrated circuit between a first layer and a second layer; and a first organic layer between the semiconductor integrated circuit and the first layer, wherein the first layer comprises a fibrous body and an organic resin, wherein the second layer comprises a fibrous body and an organic resin, and wherein the first organic layer has a lower modulus of elasticity and higher breaking strength than the first layer and the second layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A semiconductor device comprising:
-
a semiconductor integrated circuit between a first impact resistance layer and a second impact resistance layer; and a first impact diffusion layer between the semiconductor integrated circuit and the second impact resistance layer, wherein the first impact diffusion layer has a lower modulus of elasticity and higher breaking strength than the first impact resistance layer and the second impact resistance layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
-
-
25. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a semiconductor integrated circuit over a substrate with a separation layer interposed between the substrate and the semiconductor integrated circuit; bonding a first impact resistance layer to the semiconductor integrated circuit; separating the semiconductor integrated circuit from the substrate; bonding a second impact resistance layer and a first impact diffusion layer; and bonding the first impact diffusion layer to the semiconductor integrated circuit, wherein the first impact diffusion layer has a lower modulus of elasticity and higher breaking strength than the first impact resistance layer and the second impact resistance layer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
-
-
33. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a semiconductor integrated circuit over a substrate with a separation layer interposed between the substrate and the semiconductor integrated circuit; forming a first impact resistance layer over the semiconductor integrated circuit; forming a first impact diffusion layer over the first impact resistance layer; bonding the semiconductor integrated circuit, the first impact resistance layer, and the first impact diffusion layer to each other by a heat treatment and pressure treatment; separating the semiconductor integrated circuit from the substrate; bonding a second impact resistance layer and a second impact diffusion layer by a heat and pressure treatment; and bonding the second impact diffusion layer to the semiconductor integrated circuit, wherein the first impact diffusion layer and the second impact diffusion layer have a lower modulus of elasticity and higher breaking strength than the first impact resistance layer and the second impact resistance layer.
-
-
34. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a semiconductor integrated circuit over a substrate with a separation layer interposed between the substrate and the semiconductor integrated circuit; bonding a first layer to the semiconductor integrated circuit wherein the first layer has a structure body in which a fibrous body is impregnated with an organic resin; separating the semiconductor integrated circuit from the substrate; bonding a second layer and an organic layer wherein the second layer has a structure body in which a fibrous body is impregnated with an organic resin; and bonding the organic layer to the semiconductor integrated circuit, wherein the organic layer has a lower modulus of elasticity and higher breaking strength than the first layer and the second layer.
-
Specification