BULK ACOUSTIC WAVE RESONATOR WITH CONTROLLED THICKNESS REGION HAVING CONTROLLED ELECTROMECHANICAL COUPLING
First Claim
1. A bulk acoustic wave (BAW) resonator comprising:
- a piezoelectric layer situated between upper and lower electrodes, said upper and lower electrodes each comprising a high density metal;
a controlled thickness region comprising a low density metal segment, said low density metal segment being situated adjacent to said piezoelectric layer;
wherein said controlled thickness region has a controlled electromechanical coupling.
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Accused Products
Abstract
According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer situated between upper and lower electrodes, where each of the upper and lower electrodes are a high density metal. The BAW resonator further includes a controlled thickness region including a low density metal segment, where the low density metal segment is situated adjacent to the piezoelectric layer, and where the controlled thickness region has controlled electromechanical coupling. The controlled thickness region can provide reduced electromechanical coupling into lateral modes. The low density metal segment can extend along the perimeter of the BAW resonator.
30 Citations
20 Claims
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1. A bulk acoustic wave (BAW) resonator comprising:
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a piezoelectric layer situated between upper and lower electrodes, said upper and lower electrodes each comprising a high density metal; a controlled thickness region comprising a low density metal segment, said low density metal segment being situated adjacent to said piezoelectric layer; wherein said controlled thickness region has a controlled electromechanical coupling. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a BAW resonator, said method comprising:
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forming a piezoelectric layer over a lower electrode of said BAW resonator; forming a low density metal segment over said piezoelectric layer in a controlled thickness region of said BAW resonator, said controlled thickness region having a controlled electromechanical coupling; forming an upper electrode of said BAW resonator over said low density metal segment, said upper electrode comprising a high density metal. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A bulk acoustic wave (BAW) resonator comprising:
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a piezoelectric layer situated between upper and lower electrodes; a controlled thickness region comprising a dielectric segment, said dielectric segment being situated in contact with said piezoelectric layer, said dielectric segment being confined within a perimeter of said piezoelectric layer; wherein said controlled thickness region has a controlled electromechanical coupling. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification