Method and apparatus for cleaning of a CVD reactor

• US 20090269506A1
• Filed: 04/24/2008
• Published: 10/29/2009
• Est. Priority Date: 04/24/2008
• Status: Abandoned Application

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Okura, Seiji
• Application Number:
  US12/148,956
• Publication Number:
  US 20090269506A1
• Time in Patent Office: Days
• US Class Current: 427/534
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases

Abstract

The present invention provides a process and an apparatus for remote plasma cleaning of a process chamber of a chemical vapor deposition (CVD) reactor. The reactive species are generated in a remote plasma unit and are introduced into the process chamber through a plurality of inlet holes. The reactive species are free radicals such as oxygen radicals, fluorine radicals, and the like. These reactive species react with the unwanted residues in the process chamber and generate volatile products. The invention also provides a method for controlling the flow rate of the reactive species.

Claims

1. An apparatus for cleaning a process chamber, the apparatus comprising:

i. a remote plasma unit with at least one outlet, the remote plasma unit generating reactive species and supplying the reactive species through the at least one outlet;

ii. a first body with a plurality of inlet holes, the plurality of inlet holes being formed circumferentially around the first body, the plurality of inlet holes introducing the reactive species into the process chamber; and

iii. a first conduit, the first conduit connecting the remote plasma unit to the first body.

2. The apparatus according to the claim 1, wherein the process chamber is a chemical vapor deposition (CVD) reactor process chamber.

3. The apparatus according to claim 1 further comprising a second body, the second body surrounding the process chamber.

4. The apparatus according to claim 1 further comprising a susceptor, the susceptor capable of holding a substrate in the process chamber, the susceptor being located inside the process chamber.

5. The apparatus according to claim 3, wherein the first body is detachably mounted on an upper part of the second body.

6. The apparatus according to claim 3, wherein the first conduit is connected to the first body through the second body.

7. The apparatus according to claim 1, wherein the first conduit is connected to an upper part of the first body.

8. The apparatus according to claim 1, wherein the first body is a ring shaped body.

9. The apparatus according to claim 8, wherein the plurality of inlet holes is formed circumferentially on the ring shaped body.

10. The apparatus according to claim 1, wherein one or more parts are inserted into one or more of the plurality of inlet holes to control the flow rate of the reactive species.

11. The apparatus according to claim 1 further comprising a second conduit, the second conduit supplying a process gas to the process chamber, the second conduit being connected to an upper part of the process chamber.

12. The apparatus according to claim 11, wherein the second conduit comprises an inner pipe, the inner pipe connecting the second conduit to the process chamber, the inner pipe being connected to the process chamber through a first plate, the first plate being connected to the process chamber through the first body.

13. The apparatus according to claim 12, wherein a second plate is attached to an upper part of the first plate, the second plate changing the direction of flow of the reactive species.

14. The apparatus according to claim 13, wherein a third plate is mounted on the second plate, the third plate being mounted on the second plate to prevent a heat breakage of the second plate.

15. The apparatus according to claim 1, wherein the first body includes a shower plate, the plurality of inlet holes being formed circumferentially around a periphery of the shower plate.

16. The apparatus according to claim 1, wherein the plurality of inlet holes is oval shaped.

17. A process for cleaning a process chamber, the process comprising the steps of:

i. generating reactive species in a remote plasma unit;

ii. supplying the reactive species through at least one outlet of the remote plasma unit;

iii. introducing the reactive species into the process chamber through a plurality of inlet holes of a first body, the plurality of inlet holes formed circumferentially around the first body, the first body being connected to the remote plasma unit through a first conduit;

iv. reacting the reactive species with residues in the process chamber and generating volatile products; and

v. removing the volatile products from the process chamber.

18. The process according to claim 17 further comprising supplying a process gas to the process chamber through a second conduit, the second conduit being attached to an upper part of the process chamber.

19. The process according to claim 17 further comprising controlling the flow rate of the reactive species.

20. The process according to claim 19, wherein the flow rate of the reactive species is controlled by inserting one or more parts into one or more of the plurality of inlet holes of the first body.

21. The process according to claim 19, wherein the flow rate of the reactive species is controlled by changing the flow rate of a supply gas.

22. The process according to claim 17, wherein the reactive species are oxygen radicals.

23. The process according to claim 17, wherein the reactive species are fluorine radicals.

24. The process according to claim 17, wherein the reactive species are a mixture of oxygen and fluorine radicals.

25. A method for processing a substrate, the method comprising the steps of:

i. depositing a film on a substrate in a process chamber;

ii. unloading the substrate from the process chamber

iii. generating reactive species in a remote plasma unit;

iv. supplying the reactive species through at least one outlet of the remote plasma unit;

v. introducing the reactive species into the process chamber through a plurality of inlet holes of a first body, the plurality of inlet holes formed circumferentially around the first body, the first body being connected to the remote plasma unit through a first conduit; and

vi. removing residues from the process chamber, the residues being accumulated during the deposition of the film.