SELECTIVE COBALT DEPOSITION ON COPPER SURFACES
First Claim
1. A method for capping a copper surface on a substrate, comprising:
- positioning a substrate within a processing chamber, wherein the substrate comprises a contaminated copper surface and a dielectric surface;
exposing the contaminated copper surface to a reducing agent while forming a metallic copper surface during a pre-treatment process;
exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the metallic copper surface while leaving exposed the dielectric surface during a vapor deposition process; and
depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface.
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Accused Products
Abstract
Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.
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Citations
25 Claims
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1. A method for capping a copper surface on a substrate, comprising:
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positioning a substrate within a processing chamber, wherein the substrate comprises a contaminated copper surface and a dielectric surface; exposing the contaminated copper surface to a reducing agent while forming a metallic copper surface during a pre-treatment process; exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the metallic copper surface while leaving exposed the dielectric surface during a vapor deposition process; and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for capping a copper surface on a substrate, comprising:
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positioning a substrate within a processing chamber, wherein the substrate comprises a copper oxide surface and a dielectric surface; exposing the copper oxide surface to an ammonia plasma or a hydrogen plasma while forming a metallic copper surface during a pre-treatment process; exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the metallic copper surface while leaving exposed the dielectric surface during a vapor deposition process; exposing the cobalt capping layer to a plasma during a post-treatment process; and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. - View Dependent Claims (16, 17, 18, 19)
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20. A method for capping a copper surface on a substrate, comprising:
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positioning a substrate within a processing chamber, wherein the substrate comprises a copper oxide surface and a dielectric surface; exposing the copper oxide surface to an ammonia plasma or a hydrogen plasma while forming a metallic copper surface during a pre-treatment process; exposing the substrate to a cobalt precursor gas and hydrogen gas to selectively form a cobalt capping layer over the metallic copper surface while leaving exposed the dielectric surface during a vapor deposition process; and exposing the cobalt capping layer to a plasma and a reagent selected from the group consisting of nitrogen (N2), ammonia (NH3), hydrogen (H2), ammonia/nitrogen mixture, and combinations thereof during a post-treatment process. - View Dependent Claims (21, 22, 23)
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24. A method for capping a copper surface on a substrate, comprising:
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positioning a substrate within a processing chamber, wherein the substrate comprises a contaminated copper surface and a dielectric surface; exposing the contaminated copper surface to a reducing agent while forming a metallic copper surface during a pre-treatment process; depositing a cobalt capping material over the metallic copper surface while leaving exposed the dielectric surface during a deposition-treatment cycle, comprising; exposing the substrate to a cobalt precursor gas to selectively form a first cobalt layer over the metallic copper surface while leaving exposed the dielectric surface during a vapor deposition process; exposing the first cobalt layer to a plasma comprising nitrogen, ammonia, an ammonia/nitrogen mixture, or hydrogen during a treatment process; exposing the substrate to the cobalt precursor gas to selectively form a second cobalt layer over the first cobalt layer while leaving exposed the dielectric surface during the vapor deposition process; exposing the second cobalt layer to the plasma during the treatment process; and depositing a dielectric barrier layer over the cobalt capping material and the dielectric surface. - View Dependent Claims (25)
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Specification