×

SELECTIVE COBALT DEPOSITION ON COPPER SURFACES

  • US 20090269507A1
  • Filed: 04/29/2008
  • Published: 10/29/2009
  • Est. Priority Date: 04/29/2008
  • Status: Abandoned Application
First Claim
Patent Images

1. A method for capping a copper surface on a substrate, comprising:

  • positioning a substrate within a processing chamber, wherein the substrate comprises a contaminated copper surface and a dielectric surface;

    exposing the contaminated copper surface to a reducing agent while forming a metallic copper surface during a pre-treatment process;

    exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the metallic copper surface while leaving exposed the dielectric surface during a vapor deposition process; and

    depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×