NONPLANAR FACEPLATE FOR A PLASMA PROCESSING CHAMBER
First Claim
1. An electrode assembly for processing a substrate, comprising:
- a conductive faceplate having a nonplanar surface configured to face the substrate during processing, wherein the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode, the conductive faceplate and the substrate support form a plasma volume, a RF power source is applied between the conductive faceplate and the electrode, and the nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.
2 Assignments
0 Petitions
Accused Products
Abstract
A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.
62 Citations
21 Claims
-
1. An electrode assembly for processing a substrate, comprising:
a conductive faceplate having a nonplanar surface configured to face the substrate during processing, wherein the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode, the conductive faceplate and the substrate support form a plasma volume, a RF power source is applied between the conductive faceplate and the electrode, and the nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
10. An apparatus for processing a substrate, comprising:
-
a chamber body having sidewalls; a substrate support disposed in the chamber body and configured to support the substrate, wherein the substrate support comprises an electrode; a lid assembly disposed on the sidewalls of the chamber body, wherein the lid assembly and the substrate support define a plasma volume, and the lid assembly comprises a conductive faceplate having a nonplanar surface facing the substrate support, and the nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode; and a RF power source coupled to one of the conductive faceplate or the electrode and configured to generate a plasma within the plasma volume. - View Dependent Claims (11, 12, 13, 14, 15, 16)
-
-
17. A method for processing a substrate, comprising:
-
positioning the substrate on a substrate support disposed in a processing chamber, wherein the substrate support has an electrode; supplying a processing gas to the processing chamber; and generating a plasma of the processing gas by applying a RF power between the electrode of the substrate support and a conductive faceplate disposed above the substrate, wherein the conductive faceplate has a nonplanar surface configured to adjust local plasma density. - View Dependent Claims (18, 19, 20, 21)
-
Specification