TRANSPARENT CONDUCTIVE FILM AND METHOD OF PRODUCING TRANSPARENT CONDUCTIVE FILM

• US 20090269588A1
• Filed: 07/10/2009
• Published: 10/29/2009
• Est. Priority Date: 09/05/2007
• Status: Abandoned Application

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Fukahori, Souko, Kishimoto, Yutaka
• Application Number:
  US12/500,694
• Publication Number:
  US 20090269588A1
• Time in Patent Office: Days
• US Class Current: 428/412
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: Y10T 428/31507 Of polycarbonate
• CPC Class Codes: Y10T 428/31721 Of polyimide
• CPC Class Codes: Y10T 428/31786 Of polyester [e.g., alkyd, etc.]

Abstract

A transparent conductive film made of ZnO includes a ZnO layer having a region having a granular crystal structure. The zinc oxide layer is doped with a group-III element. The dose of the group-III element is about 0.8 to about 11.5 weight percent on an oxide mass basis. The group-III element is at least one selected from the group consisting of Ga, Al, and In. The full width at half maximum of a ZnO (002) rocking curve is preferably about 10.5 degrees or less.

Claims

1. A transparent conductive film comprising:

a zinc oxide layer grown on a substrate;

wherein

the zinc oxide layer includes a region having a granular crystal structure.

2. The transparent conductive film according to claim 1, wherein the zinc oxide layer is doped with a group-III element.

3. The transparent conductive film according to claim 2, wherein a dose of the group-III element is about 0.8 to about 11.5 weight percent on an oxide mass basis.

4. The transparent conductive film according to claim 1, wherein a full width at half maximum of a zinc oxide (002) rocking curve is preferably about 10.5 degrees or less.

5. The transparent conductive film according to claim 1, wherein the substrate is made of at least one selected from the group consisting of glass, quartz, sapphire, Si, SiC, polyethylene terephthalate, polyethylene naphthalate, polyethersulfone, polyimide, cycloolefinic polymers, and polycarbonate.

6. The transparent conductive film according to claim 1, wherein the group-III element is at least one selected from the group consisting of Ga, Al, and In.