METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

• US 20090269880A1
• Filed: 11/09/2007
• Published: 10/29/2009
• Est. Priority Date: 11/21/2006
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Den, Toru, Iwasaki, Tatsuya, Itagaki, Naho
• Granted Patent: US 8,084,307 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A method for manufacturing a thin film transistor containing an channel layer 11 having indium oxide, including forming an indium oxide film as an channel layer and subjecting the formed indium oxide film to an annealing in an oxidizing atmosphere.

Claims

1. A method for manufacturing a thin film transistor including a channel layer comprised of indium oxide, comprising forming an indium oxide film to provide said channel layer and subjecting the formed indium oxide film to an annealing step in an oxidizing atmosphere of 150°

C. or more to 450°

C. or less wherein the indium oxide film is amorphous prior to the annealing step and is crystalline after the annealing step.

4. The method for manufacturing a thin film transistor according to claim 1, wherein the indium oxide film is formed by sputtering.

5. The method for manufacturing a thin film transistor according to claim 4, wherein the step of forming the indium oxide film is carried out in an oxygen atmosphere having less oxygen concentration than the oxidizing atmosphere in the annealing step.

6. The method for manufacturing a thin film transistor according to claim 1, wherein the indium oxide film prior to the annealing step in the oxidizing atmosphere has a resistivity of between 1 Ω

cm and 500 Ω

cm.

7. The method for manufacturing a thin film transistor according to claim 6, wherein the indium oxide film after the annealing step in the oxidizing atmosphere has a resistivity of between more than 1 Ω

cm and 500 Ω

cm or less.

2-3. -3. (canceled)