MANUFACTURING METHOD OF THIN FILM TRANSISTOR INCLUDING LOW RESISTANCE CONDUCTIVE THIN FILMS
First Claim
1. A manufacturing method of a thin film transistor comprising:
- forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween;
forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes;
forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel;
etching the low resistance conductive thin films and the oxide semiconductor thin film layer so that side surfaces of the low resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel; and
mounting a gate electrode over the oxide semiconductor thin film layer.
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Accused Products
Abstract
A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.
114 Citations
10 Claims
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1. A manufacturing method of a thin film transistor comprising:
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forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel; etching the low resistance conductive thin films and the oxide semiconductor thin film layer so that side surfaces of the low resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel; and mounting a gate electrode over the oxide semiconductor thin film layer. - View Dependent Claims (2, 3, 4)
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5. A manufacturing method of a thin film transistor comprising:
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mounting a gate electrode over a substrate; placing a gate insulating film on the gate electrode and forming a pair of source/drain electrodes on the gate insulating film, such that the source/drain electrodes define a gap therebetween; forming a pair of low resistance conductive thin films, which define a gap therebetween, each of the low resistance conductive thin films covering at least a part of the one of source/drain electrodes and having an inner end that is positioned inside outer ends of the gate electrode in a channel length direction of a channel of the thin film transistor; forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap so that the oxide semiconductor thin film layer functions as the channel; and etching the low resistance conductive thin films and the oxide semiconductor thin film layer such that side surfaces of the low resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. - View Dependent Claims (6, 7, 8)
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9. A manufacturing method of a thin film transistor comprising:
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forming a predetermined number of pairs of source/drain electrodes, each said pair comprising a source electrode and a drain electrode defining a gap therebetween at an area corresponding to a channel of the thin film transistor, and each said pair being spaced apart from an adjacent pair by a spacing; forming a pair of low resistance conductive thin films, which define a gap therebetween along the channel-corresponding area, such that one of the low resistance conductive thin films covers the source electrodes and another of the low resistance conductive thin films covers the drain electrodes; forming an oxide semiconductor thin film layer on the pair of low resistance conductive thin films, on the channel-corresponding area, and on each said spacing; and etching the oxide semiconductor thin film layer and the low resistance conductive thin films along each said spacing between adjacent pairs of the source/drain electrodes, to separate each of the oxide semiconductor thin film layer and the low resistance conductive thin films into a predetermined number of oxide semiconductor thin film layer pieces and a predetermined number of pairs of low resistance conductive thin film pieces corresponding respectively to the predetermined number of pairs of source/drain electrodes, such that at each said spacing side surfaces of each of the oxide semiconductor thin film layer pieces coincide with corresponding side surfaces of the pair of low resistance conductive thin film pieces corresponding to the oxide semiconductor thin film layer piece. - View Dependent Claims (10)
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Specification