METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SEMICIRCULAR TOP SURFACES AND ROUNDED TOP CORNERS AND EDGES
First Claim
Patent Images
1. A method for forming a FIN structure with semicircular top surface and rounded top surface corners and edges, comprising:
- forming a FIN structure in a semiconductor substrate wherein said FIN structure includes a top surface having corners and edges; and
annealing said FIN structure wherein said annealing causes said top surface to have a semicircular shape and said top surface corners and edges to be rounded wherein said annealing causes said top surface to have a semicircular shape and said top surface corners and edges to be rounded without additional operations.
8 Assignments
0 Petitions
Accused Products
Abstract
Methods for fabricating a FIN structure with a semicircular top surface and rounded top surface corners and edges are disclosed. As a part of a disclosed method, a FIN structure is formed in a semiconductor substrate. The FIN structure includes a top surface having corners and edges. The FIN structure is annealed where the annealing causes the top surface to have a semicircular shape and the top surface corners and edges to be rounded.
-
Citations
20 Claims
-
1. A method for forming a FIN structure with semicircular top surface and rounded top surface corners and edges, comprising:
-
forming a FIN structure in a semiconductor substrate wherein said FIN structure includes a top surface having corners and edges; and annealing said FIN structure wherein said annealing causes said top surface to have a semicircular shape and said top surface corners and edges to be rounded wherein said annealing causes said top surface to have a semicircular shape and said top surface corners and edges to be rounded without additional operations. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for forming a storage element, comprising:
-
forming a FIN structure on a semiconductor substrate wherein said forming said FIN structure comprises; forming a semiconductor FIN structure wherein said semiconductor FIN structure includes a top surface having corners and edges; and annealing said semiconductor FIN structure wherein said annealing causes said top surface to have a semicircular shape and said top surface corners and edges to be rounded wherein said annealing causes said top surface to have a semicircular shape and said top surface corners and edges to be rounded without additional operations, forming a first oxide layer on said semiconductor FIN structure; forming a charge storage layer on said first oxide layer; forming a second oxide layer on said charge storage layer; and forming a polysilicon gate layer on said second oxide layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
-
17. A method for forming a memory array comprising:
-
forming a semiconductor substrate; and
forming a plurality of storage elements on said semiconductor substrate, comprising;forming a plurality of semiconductor FIN structures wherein said plurality of semiconductor FIN structures include a top surface having corners and edges; and annealing the plurality of semiconductor FIN structures wherein said annealing causes said top surface to have a semicircular shape and said top surface corners and edges to be rounded wherein said annealing causes said top surface to have a semicircular shape and said top surface corners and edges to be rounded without additional operations, forming a first oxide layer on said plurality of semiconductor FIN structures; forming a charge storage layer on said first oxide layer; and forming a second oxide layer on the charge storage layer. - View Dependent Claims (18, 20)
-
-
19. (canceled)
Specification