Method of forming a wiring having carbon nanotube

• US 20090271982A1
• Filed: 04/29/2009
• Published: 11/05/2009
• Est. Priority Date: 05/01/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Dong-Woo, Lee, Sun-Woo, Yoon, Hong-Sik, Kim, Jung-Hyeon, Moon, Seong-Ho
• Granted Patent: US 7,877,865 B2
• Time in Patent Office: Days
• US Class Current: 29/846
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 2221/1094 Conducting structures comprising nanotubes or nanowires
• CPC Class Codes: H01L 23/5252 comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
• CPC Class Codes: H01L 23/53276 containing carbon, e.g. fullerenes superconducting fullerenes H10N60/853
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 29/49117 Conductor or circuit manufacturing
• CPC Class Codes: Y10T 29/4913 Assembling to base an electrical component, e.g., capacitor, etc.
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

In a method of forming a wiring having a carbon nanotube, a lower wiring is formed on a substrate, and a catalyst layer is formed on the lower wiring. An insulating interlayer is formed on the substrate to cover the catalyst layer, and an opening is formed through the insulating interlayer to expose an upper face of the catalyst layer. A carbon nanotube wiring is formed in the opening, and an upper wiring is formed on the carbon nanotube wiring and the insulating interlayer to be electrically connected to the carbon nanotube wiring. A thermal stress is generated between the carbon nanotube wiring and the upper wiring to produce a dielectric breakdown of a native oxide layer formed on a surface of the carbon nanotube wiring. A wiring having a reduced electrical resistance between the carbon nanotube wiring and the upper wiring may be obtained.

Claims

1. A method of forming a wiring having a carbon nanotube, comprising:

forming a lower wiring on a substrate;

forming a catalyst layer on the lower wiring;

forming an insulating interlayer on the substrate to cover the catalyst layer;

forming an opening through the insulating interlayer to expose an upper face of the catalyst layer;

forming a carbon nanotube wiring in the opening;

forming an upper wiring on the carbon nanotube wiring and the insulating interlayer, the upper wiring being electrically connected to the carbon nanotube wiring; and

generating a thermal stress between the carbon nanotube wiring and the upper wiring to produce a dielectric breakdown of a native oxide layer formed on a surface of the carbon nanotube wiring.

2. The method of claim 1, wherein the thermal stress is generated by providing current to the carbon nanotube wiring, and the thermal stress induces partial melting of a metal contained in the upper wiring.

3. The method of claim 2, wherein an amount of the current is in a range of about 1 mA to about 5 mA.

4. The method of claim 1, wherein forming the carbon nanotube wiring comprises:

growing at least one carbon nanotube from the catalyst layer toward an entrance of the opening;

forming a capping layer on the insulating interlayer to fill the opening in which the carbon nanotube is formed; and

performing a chemical mechanical polishing (CMP) process on the capping layer until upper faces of the insulating interlayer pattern and the at least one carbon nanotube are exposed.

5. The method of claim 4, wherein the native oxide layer is formed on an upper surface of the at least one carbon nanotube by a reaction with a slurry applied to the CMP process.

6. The method of claim 1, further comprising forming a first contact metal layer on the lower wiring before forming the catalyst layer.

7. The method of claim 1, further comprising forming a second contact metal layer on the carbon nanotube wiring and the insulating interlayer before forming the upper wiring.

8. The method of claim 7, wherein the second contact metal layer is formed using a metal including titanium (Ti) to have a thickness sufficient to inhibit a metal atom of the upper wiring from being diffused up to the carbon nanotube wiring.

9. A method of forming a wiring having a carbon nanotube, comprising:

forming a lower wiring on a substrate;

forming a catalyst layer on the lower wiring;

forming an insulating interlayer having an opening on the catalyst layer and the substrate, the opening exposing the catalyst layer;

growing a carbon nanotube from the catalyst layer toward an entrance of the opening;

forming a capping layer on the insulating interlayer to fill the opening in which the carbon nanotube is formed;

partially removing the capping layer and the carbon nanotube to form a carbon nanotube wiring by performing a chemical mechanical polishing (CMP) process until upper faces of the insulating interlayer and the carbon nanotube are exposed;

removing a native oxide layer from an upper surface of the carbon nanotube wiring and partially removing the insulating interlayer such that an upper portion of the carbon nanotube wiring is protruded from the insulating interlayer, the native oxide layer being formed on the carbon nanotube wiring while performing the CMP process; and

forming an upper wiring on the carbon nanotube wiring and the insulating interlayer, the upper wiring being electrically connected to the carbon nanotube wiring.

10. The method of claim 9, wherein the native oxide layer is removed by performing a cleaning process using a cleaning solution including hydrofluoric acid.

11. The method of claim 9, wherein the native oxide layer is removed by performing an etching process using plasma.

12. The method of claim 9, wherein forming the upper wiring electrically connected to the carbon nanotube wiring further comprises generating a thermal stress between the carbon nanotube wiring and the upper wiring to partially melt a metal of the upper wiring.

13. The method of claim 12, wherein the thermal stress is generated by providing current of from about 1 mA to about 5 mA to the carbon nanotube wiring.