Poly-Crystalline Layer Structure for Light-Emitting Diodes

• US 20090272975A1
• Filed: 08/11/2008
• Published: 11/05/2009
• Est. Priority Date: 05/05/2008
• Status: Abandoned Application

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yu, Chen-Hua, Yu, Chia-Lin, Chen, Ding-Yuan, Chiou, Wen-Chih
• Application Number:
  US12/189,558
• Publication Number:
  US 20090272975A1
• Time in Patent Office: Days
• US Class Current: 257/51
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02595 polycrystalline
• CPC Class Codes: H01L 33/007 comprising nitride compounds

Abstract

A structure and method for a light-emitting diode are presented. A preferred embodiment comprises a substrate with a conductive, poly-crystalline, silicon-containing layer over the substrate. A first contact layer is epitaxially grown, using the conductive, poly-crystalline, silicon-containing layer as a nucleation layer. An active layer is formed over the first contact layer, and a second contact layer is formed over the active layer.

Claims

1. A light-emitting diode comprising:

a substrate;

a poly-crystalline layer over the substrate, the poly-crystalline layer comprising silicon;

a first contact layer on the poly-crystalline, silicon-containing layer;

an active layer over the first contact layer; and

a second contact layer over the active layer.

2. The light-emitting diode of claim 1, wherein the poly-crystalline layer comprises polysilicon.

3. The light-emitting diode of claim 1, wherein the poly-crystalline layer is conductive.

4. The light-emitting diode of claim 1, wherein the first contact layer comprises a group III-nitride.

5. The light-emitting diode of claim 1, wherein the poly-crystalline layer comprises Si_1-xGe_x.

6. The light-emitting diode of claim 1, wherein the substrate comprises silicon.

7. The light-emitting diode of claim 1, wherein the substrate comprises a conductive material.

8. The light-emitting diode of claim 1, wherein the substrate comprises a non-conductive material.

9. A light-emitting diode comprising:

a substrate;

a first layer over the substrate, the first layer comprising a conductive poly-crystalline material;

a first contact layer over the first layer;

an active layer over the first contact layer; and

a second contact layer over the active layer.

10. The light-emitting diode of claim 9, wherein the conductive poly-crystalline material comprises silicon.

11. The light-emitting diode of claim 9, wherein the first layer comprises polysilicon.

12. The light-emitting diode of claim 9, wherein the first contact layer comprises a group III-nitride.

13. The light-emitting diode of claim 9, wherein the substrate comprises a conductive material.

14. The light-emitting diode of claim 9, wherein the substrate comprises a non-conductive material.

15. A light-emitting diode comprising:

a substrate;

a poly-crystalline layer over the substrate, the poly-crystalline layer being conductive and comprising a silicon-containing material;

a first contact layer on the poly-crystalline layer;

an active layer over the first contact layer; and

a second contact layer over the active layer.

16. The light-emitting diode of claim 15, wherein the poly-crystalline layer comprises polysilicon.

17. The light-emitting diode of claim 15, wherein the first contact layer comprises a group III-nitride.

18. The light-emitting diode of claim 15, wherein the substrate comprises a conductive material.

19. The light-emitting diode of claim 15, wherein the substrate comprises a nonconductive material.

20. The light-emitting diode of claim 15, wherein the poly-crystalline layer comprises Si_1-xGe_x.