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METHOD FOR PRODUCING A TRANSISTOR COMPONENT HAVING A FIELD PLATE

  • US 20090273024A1
  • Filed: 05/05/2008
  • Published: 11/05/2009
  • Est. Priority Date: 05/05/2008
  • Status: Active Grant
First Claim
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1. A method for producing a transistor component having a field plate, comprising:

  • providing a semiconductor body having a first side and having at least one first trench extending into the semiconductor body proceeding from the first side;

    producing a field plate dielectric layer on the first side and at uncovered areas of the first trench in such a way that a residual trench remains;

    producing a field plate layer in the residual trench, including applying an electrically conductive layer on the field plate dielectric layer in such a way that the residual trench is completely filled, wherein the electrically conductive layer is applied in such a way that it covers the field plate dielectric layer above the first side of the semiconductor body;

    uncovering the first side of the semiconductor body by using a polishing method, wherein the electrically conductive layer is partially removed during the polishing method, such that the field plates are formed in the residual trenches; and

    partially removing the field plate dielectric layer from the at least one first trench proceeding from the first side.

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