METHOD FOR PRODUCING A TRANSISTOR COMPONENT HAVING A FIELD PLATE

• US 20090273024A1
• Filed: 05/05/2008
• Published: 11/05/2009
• Est. Priority Date: 05/05/2008
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Blank, Olivier, Hiller, Uli
• Granted Patent: US 7,674,678 B2
• Time in Patent Office: Days
• US Class Current: 257/330
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A method for producing a transistor component having a field plate. One embodiment includes providing a semiconductor body having a first side, and including a first trench extending into the semiconductor body. A field plate dielectric layer is produced on the first side and at uncovered areas of the first trench such that a residual trench remains. A field plate layer is produced in the residual trench. The first side of the semiconductor body is uncovered using a polishing method. The field plate dielectric layer is partially removed from the at least one first trench proceeding from the first side.

Claims

1. A method for producing a transistor component having a field plate, comprising:

providing a semiconductor body having a first side and having at least one first trench extending into the semiconductor body proceeding from the first side;

producing a field plate dielectric layer on the first side and at uncovered areas of the first trench in such a way that a residual trench remains;

producing a field plate layer in the residual trench, including applying an electrically conductive layer on the field plate dielectric layer in such a way that the residual trench is completely filled, wherein the electrically conductive layer is applied in such a way that it covers the field plate dielectric layer above the first side of the semiconductor body;

uncovering the first side of the semiconductor body by using a polishing method, wherein the electrically conductive layer is partially removed during the polishing method, such that the field plates are formed in the residual trenches; and

partially removing the field plate dielectric layer from the at least one first trench proceeding from the first side.

2. The method of claim 1, wherein the semiconductor body has at least one second trench proceeding from the first side, and wherein the method further comprises:

producing a protective layer over at least one of the second trenches, which protects the field plate dielectric layer in this trench against partial removal.

3. The method of claim 1, wherein the polishing method is a mechanical polishing method or a chemical-mechanical polishing method.

4. The method of claim 1, wherein producing the field plate dielectric layer includes thermal oxidation of the semiconductor body.

5. The method of claim 1, wherein producing the field plate dielectric layer includes depositing a dielectric layer.

6. The method of claim 1, which furthermore comprises:

producing a gate dielectric layer at least at uncovered areas of the at least one first trench;

producing a gate electrode on the gate dielectric layer.

9. The method of claim 1, wherein producing the field plate layer comprises:

producing a first partial layer composed of an electrically conductive material which partially fills the residual trench and which forms field plates;

producing a second partial layer composed of a dielectric material which completely fills the residual trench.

7-8. -8. (canceled)

10. A method for producing a transistor component having a field plate, comprising:

providing a semiconductor body having a first side and having at least one first trench extending into the semiconductor body proceeding from the first side;

producing a field plate dielectric layer on the first side and at uncovered areas of the first trench in such a way that a residual trench remains;

producing a field plate layer in the residual trench;

uncovering the first side of the semiconductor body by using a polishing method; and

partially removing the field plate dielectric layer from the at least one first trench proceeding from the first side wherein at least two trenches are produced, and wherein producing the field plate layer in the at least one first trench comprises;

producing a first partial layer composed of an electrically conductive material which partially fills the residual trench of the at least one first trench and which forms a field plate;

producing a second partial layer composed of a dielectric material which fills the residual trench at least as far as the level of the first side of the semiconductor body; and

producing a field plate layer in at least one second trench including filling a residual trench of the at least one second trench with an electrically conductive material at least as far as the level of the first side of the semiconductor body;

wherein filling the residual trench of the at least one first trench and of the at least one second trench with an electrically conductive material comprises;

producing a material layer composed of an electrically conductive material which completely covers the field plate dielectric layer; and

removing the material layer composed of the electrically conductive material at least from those regions of the field plate dielectric layer above the first side of the semiconductor body during the polishing process.

11. The method of claim 10, wherein producing the first partial layer comprises:

filling the residual trenches of the at least one first and of the at least one second trenches with an electrically conductive material at least as far as the level of the first side of the semiconductor body;

producing a mask layer above the at least one second one of the trenches; and

partially removing the electrically conductive material from the residual trench of the at least one first trench proceeding from the first side of the semiconductor body.

12. (canceled)

13. A method for making an integrated circuit including a transistor component comprising:

providing a semiconductor body having a first side and a first trench extending from the first side into the semiconductor body;

producing a field plate dielectric layer on the first side and at uncovered areas of the first trench such that residual trench remains;

producing a field plate layer in the residual trench, including applying an electrically conductive layer on the field plate dielectric layer in such a way that the residual trench is completely Filled, wherein the electrically conductive layer is applied in such a way that it covers the field plate dielectric layer above the first side of the semiconductor body, and wherein the electrically conductive layer is partially removed during a polishing method, such that field plates are formed in the residual trenches; and

partially removing the field plate dielectric layer from the at least one first trench by the polishing method.

14. The method of claim 13, wherein at least two trenches extending into the semiconductor body proceeding from the first side are produced and which furthermore comprises:

producing a protective layer over at least one of the second trenches, which protects the field plate dielectric layer in this trench against partial removal.

15. The method of claim 13, uncovering the first side of the semiconductor body by using a polishing method.

16. The method of claim 13, wherein producing the field plate dielectric layer includes thermal oxidation of the semiconductor body.

17. The method of claim 13, wherein producing the field plate dielectric layer includes depositing a dielectric layer.

18. The method of claim 13, which furthermore comprises:

producing a gate dielectric layer at least at uncovered areas of the at least one first trench;

producing a gate electrode on the gate dielectric layer.

21. The method of claim 13, wherein producing the field plate layer comprises:

producing a first partial layer composed of an electrically conductive material which partially fills the residual trench and which forms field plates;

producing a second partial layer composed of a dielectric material which completely fills the residual trench.

19-20. -20. (canceled)

22. (canceled)