Nonvolatile Memory Device
First Claim
1. A nonvolatile memory device, comprising:
- a plurality of write lines provided in rows and columns; and
a magnetoresistive element arranged to correspond to an intersection of two write lines corresponding to a row and a column among said plurality of write lines, said magnetoresistive element storing data by being subjected to a write magnetic field generated by currents flowing through said respective two write lines according to write data, and changing an electric resistance value in a nonvolatile manner,said magnetoresistive element includinga pinned layer having a fixed magnetization direction irrespective of said write magnetic field,a recording layer having a magnetization direction changeable according to said write magnetic field, anda first nonmagnetic layer sandwiched between said pinned layer and said recording layer,said recording layer includingan exchange-coupling layer,a first ferromagnetic layer made of a first material, anda second nonmagnetic layer sandwiched between said exchange-coupling layer and said first ferromagnetic layer,said exchange-coupling layer includingsecond and third ferromagnetic layers made of a second material different from said first material, anda third nonmagnetic layer sandwiched between said second ferromagnetic layer and said third ferromagnetic layer, said second and third ferromagnetic layers having magnetizations oriented opposite to each other and substantially identical in magnitude to cancel each other.
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Accused Products
Abstract
Ferromagnetic layers (18, 22) have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers (18, 22) is substantially zero. That is, the ferromagnetic layers (18, 22) are exchange-coupled with a nonmagnetic layer (20) interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers (18, 22) forming the SAF structure is substantially zero, the magnetization of a recording layer (RL) is determined by the magnetization of a ferromagnetic layer (14). Therefore, the ferromagnetic layer (14) is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers (18, 22) are made of a CoFe alloy having a high exchange-coupling force.
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Citations
11 Claims
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1. A nonvolatile memory device, comprising:
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a plurality of write lines provided in rows and columns; and a magnetoresistive element arranged to correspond to an intersection of two write lines corresponding to a row and a column among said plurality of write lines, said magnetoresistive element storing data by being subjected to a write magnetic field generated by currents flowing through said respective two write lines according to write data, and changing an electric resistance value in a nonvolatile manner, said magnetoresistive element including a pinned layer having a fixed magnetization direction irrespective of said write magnetic field, a recording layer having a magnetization direction changeable according to said write magnetic field, and a first nonmagnetic layer sandwiched between said pinned layer and said recording layer, said recording layer including an exchange-coupling layer, a first ferromagnetic layer made of a first material, and a second nonmagnetic layer sandwiched between said exchange-coupling layer and said first ferromagnetic layer, said exchange-coupling layer including second and third ferromagnetic layers made of a second material different from said first material, and a third nonmagnetic layer sandwiched between said second ferromagnetic layer and said third ferromagnetic layer, said second and third ferromagnetic layers having magnetizations oriented opposite to each other and substantially identical in magnitude to cancel each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification