Nonvolatile Memory Device

• US 20090273965A1
• Filed: 11/17/2006
• Published: 11/05/2009
• Est. Priority Date: 11/30/2005
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Taki, Masakazu, Furukawa, Taisuke, Kuroiwa, Takeharu, Takenaga, Takashi
• Granted Patent: US 7,773,408 B2
• Time in Patent Office: Days
• US Class Current: 365/158
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11C 11/155 with cylindrical configuration
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1655 Bit-line or column circuits
• CPC Class Codes: G11C 11/1657 Word-line or row circuits
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H01F 10/132 containing cobalt
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

Ferromagnetic layers (18, 22) have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers (18, 22) is substantially zero. That is, the ferromagnetic layers (18, 22) are exchange-coupled with a nonmagnetic layer (20) interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers (18, 22) forming the SAF structure is substantially zero, the magnetization of a recording layer (RL) is determined by the magnetization of a ferromagnetic layer (14). Therefore, the ferromagnetic layer (14) is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers (18, 22) are made of a CoFe alloy having a high exchange-coupling force.

Claims

1. A nonvolatile memory device, comprising:

a plurality of write lines provided in rows and columns; and

a magnetoresistive element arranged to correspond to an intersection of two write lines corresponding to a row and a column among said plurality of write lines, said magnetoresistive element storing data by being subjected to a write magnetic field generated by currents flowing through said respective two write lines according to write data, and changing an electric resistance value in a nonvolatile manner,

said magnetoresistive element including

a pinned layer having a fixed magnetization direction irrespective of said write magnetic field,

a recording layer having a magnetization direction changeable according to said write magnetic field, and

a first nonmagnetic layer sandwiched between said pinned layer and said recording layer,

said recording layer including

an exchange-coupling layer,

a first ferromagnetic layer made of a first material, and

a second nonmagnetic layer sandwiched between said exchange-coupling layer and said first ferromagnetic layer,

said exchange-coupling layer including

second and third ferromagnetic layers made of a second material different from said first material, and

a third nonmagnetic layer sandwiched between said second ferromagnetic layer and said third ferromagnetic layer, said second and third ferromagnetic layers having magnetizations oriented opposite to each other and substantially identical in magnitude to cancel each other.

2. The nonvolatile memory device according to claim 1, wherein said second material contains one or more of cobalt, iron, and nickel.

3. The nonvolatile memory device according to claim 2, wherein said second material is a cobalt-iron alloy.

4. The nonvolatile memory device according to claim 1, wherein said first material contains one or more of cobalt, iron, and nickel, and boron.

5. The nonvolatile memory device according to claim 4, wherein said first material is a cobalt-iron alloy containing boron.

6. The nonvolatile memory device according to claim 1, wherein at least one of said first, second, and third nonmagnetic layers is ruthenium.

7. The nonvolatile memory device according to claim 1, wherein

said recording layer is arranged such that said first ferromagnetic layer is joined to said first nonmagnetic layer, and further includes

a fourth ferromagnetic layer, and

a fourth nonmagnetic layer sandwiched between said exchange-coupling layer and said fourth ferromagnetic layer, said fourth ferromagnetic layer having a magnetization direction opposite to a magnetization direction of said first ferromagnetic layer.

8. The nonvolatile memory device according to claim 7, wherein said fourth ferromagnetic layer contains one or more of cobalt, iron, and nickel.

9. The nonvolatile memory device according to claim 8, wherein said fourth ferromagnetic layer is a nickel-iron alloy.

10. The nonvolatile memory device according to claim 1, wherein said recording layer includes a plurality of said exchange-coupling layers.

11. The nonvolatile memory device according to claim 1, wherein said recording layer is formed with an external magnetic field applied thereto, and thereafter subjected to thermal treatment with an external magnetic field applied thereto, and thereby a direction for easy magnetization is determined.