System and Method of Encapsulation

• US 20090275163A1
• Filed: 11/06/2008
• Published: 11/05/2009
• Est. Priority Date: 04/30/2008
• Status: Active Grant

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: Cavendish Kinetics Ltd. (Qorvo, Inc.)
• Inventors: Van Kampen, Robertus P., Renault, Mickael, Bobey, James F., Lacey, Joseph Damian Gordon, Joshi, Vikram
• Granted Patent: US 7,993,950 B2
• Time in Patent Office: Days
• US Class Current: 438/51
• CPC Class Codes: B81C 1/00333 Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
• CPC Class Codes: B81C 2203/0145 Hermetically sealing an opening in the lid
• CPC Class Codes: B81C 2203/0154 Moulding a cap over the MEMS device

Abstract

Embodiments discussed herein generally include methods of fabricating MEMS devices within a structure. The MEMS device may be formed in a cavity above the structure, and additional metallization may occur above the MEMS device. The cavity may be formed by depositing an encapsulating layer over the sacrificial layers that enclose the MEMS device. The encapsulating layer may then be etched to expose portions of the sacrificial layers. The sacrificial layers are exposed because they extend through the sidewalls of the encapsulating layer. Therefore, no release holes are etched through the top of the encapsulating layer. An etchant then removes the sacrificial layers to free the MEMS device and form the cavity and an opening through the sidewall of the encapsulating layer. Another encapsulating layer may then be deposited to seal the cavity and the opening.

Claims

1. A method of encapsulating a device, comprising:

depositing one or more sacrificial layers over a substrate, the one or more sacrificial layers forming a body substantially equivalent to a shape of a first cavity to be formed, the one or more sacrificial layers additionally having one or more release tabs extending from the body;

forming a device in the one or more sacrificial layers;

depositing a first encapsulating layer over the one or more sacrificial layers, the first encapsulating layer in contact with the substrate;

etching the first encapsulating layer to expose the one or more release tabs and to form a first encapsulating sidewall extending from a top of the first encapsulating layer to the substrate, the one or more release tabs extending beyond the first encapsulating sidewall;

removing the one or more sacrificial layers to form one or more openings between the first encapsulating layer and the substrate and the first cavity between the substrate, the first encapsulating layer, and the first encapsulating sidewall; and

depositing a second encapsulating layer over the first encapsulating layer to seal the opening.

2. The method of claim 1, wherein the one or more sacrificial layers comprise a first sacrificial layer and a second sacrificial layer, the method further comprising:

etching the first sacrificial layer to expose an electrode of the structure;

depositing a conductive layer over the first sacrificial layer and the electrode;

depositing the second sacrificial layer over the conductive layer and the first sacrificial layer; and

etching the second sacrificial layer.

3. The method of claim 2, wherein forming the device further comprises etching the conductive layer to form a cantilever, wherein etching the second sacrificial layer and the first sacrificial layer frees the cantilever.

4. The method of claim 1, wherein the first encapsulating layer comprises an electrically conductive material.

5. The method of claim 4, wherein depositing the first encapsulating layer further comprises depositing the first encapsulating layer over an exposed electrode of the structure.

6. The method of claim 5, wherein the one or more release tabs extend through the first encapsulating sidewall such that no line of sight path is present to the first cavity.

7. The method of claim 1, wherein the one or more release tabs have a height that is less than a height of the first cavity.

8. A method of encapsulating a device, comprising:

depositing one or more sacrificial layers over a substrate, the one or more sacrificial layers having a body with a shape substantially equal to a cavity to be formed and one or more release tabs extending from the body;

forming a device within the one or more sacrificial layers;

depositing a first encapsulating layer over the one or more sacrificial layers, the first encapsulating layer having a top surface and sidewalls extending between the top surface and a top surface of the structure, the first encapsulating layer having one or more openings therethrough with at least one opening having a first release tab of the one or more release tabs extending therethrough and beyond a respective sidewall;

removing the one or more sacrificial layers to form the cavity between the top surface of the first encapsulating layer, the sidewalls of the first encapsulating layer, and the top surface of the structure; and

depositing a second encapsulating layer over the first encapsulating layer to seal each of the at least one openings.

9. The method of claim 8, wherein the one or more sacrificial layers comprises a first sacrificial layer and a second sacrificial layer, the method further comprising:

etching the first sacrificial layer to expose an electrode of the structure;

depositing a conductive layer over the first sacrificial layer and the electrode;

depositing the second sacrificial layer over the conductive layer and the first sacrificial layer; and

removing the second sacrificial layer.

10. The method of claim 9, wherein forming the device further comprises etching the conductive layer to form a cantilever, wherein removing the second sacrificial layer and the first sacrificial layer frees the cantilever.

11. The method of claim 8, wherein the first encapsulating layer comprises an electrically conductive material.

12. The method of claim 11, wherein depositing the first encapsulating layer further comprises depositing the first encapsulating layer over an exposed electrode of the structure.

13. The method of claim 12, wherein the second encapsulating layer comprises one or more inter-metal dielectric layers.

14. The method of claim 8, wherein the one or more release tabs have a height that is less than a height of the cavity.

15. A method of encapsulating a device, comprising:

depositing a first sacrificial layer over a substrate;

forming a device on the first sacrificial layer;

depositing a second sacrificial layer over the device and the first sacrificial layer;

etching the second sacrificial layer and the first sacrificial layer to form a patterned first sacrificial layer and a patterned second sacrificial layer, the patterned first sacrificial layer and the patterned second sacrificial layer collectively comprising a body having a shape substantially equivalent to a shape of a cavity to be formed, at least one of the patterned first sacrificial layer and the patterned second sacrificial layer having one or more release tabs extending from the body;

depositing a first encapsulating layer over the patterned second sacrificial layer, the first encapsulating layer in contact with the substrate, and the patterned second sacrificial layer and the one or more release tabs;

etching the first encapsulating layer to expose a top surface of the one or more release tabs;

etching the patterned second sacrificial layer and the patterned first sacrificial layer to form the cavity between the first encapsulating layer and the substrate and one or more openings through the first encapsulating layer at an area corresponding to the one or more release tabs; and

depositing a second encapsulating layer over the first encapsulating layer and the one or more openings to seal the cavity, the second encapsulating layer bordering the cavity.

16. The method of claim 15, further comprising:

etching the first sacrificial layer to expose an electrode of the structure; and

depositing a conductive layer over the first sacrificial layer and the electrode.

17. The method of claim 16, wherein forming the device further comprises etching the conductive layer to form a cantilever, wherein etching the patterned second sacrificial layer and the patterned first sacrificial layer frees the cantilever.

18. The method of claim 17, wherein the first encapsulating layer comprises an electrically conductive material.

19. The method of claim 15, wherein the second encapsulating layer comprises one or more inter-metal dielectric layers.

20. The method of claim 19, wherein the one or more release tabs have a height that is less than a height of the first cavity.