PLASMA PROCESSING METHOD AND COMPUTER READABLE STORAGE MEDIUM
First Claim
1. A plasma etching method comprising:
- disposing a first electrode and a second electrode in parallel to each other with a gap therebetween in a vacuum evacuable processing chamber;
preparing a part in the processing chamber;
supporting a substrate to be processed by the second electrode to face the first electrode;
vacuum-evacuating the processing chamber to a predetermined pressure;
supplying a first processing gas containing an etchant gas into a processing space between the first electrode and the second electrode;
generating a plasma of the first processing gas in the processing space by applying a radio frequency power to the first electrode or the second electrode; and
etching a film to be processed on the substrate by using the plasma while using as a mask a resist pattern formed on the film,wherein a resist modification process is performed on the substrate in the processing chamber before etching the film and includes;
vacuum-evacuating the processing chamber to a desired pressure;
supplying a second processing gas into the processing space;
generating a plasma of the second processing gas in the processing space by applying the radio frequency power to the first electrode or the second electrode; and
applying a negative DC voltage to the part exposed to the plasma, the part being disposed away from the substrate in the processing chamber and injecting electrons discharged from the part into the resist pattern on the substrate to thereby improve an etching resistance of the resist pattern.
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Accused Products
Abstract
A plasma etching method includes disposing first electrode and second electrodes; preparing a part in a processing chamber; supporting a substrate by the second electrode to face the first electrode; vacuum-evacuating the processing chamber; supplying a first processing gas containing an etchant gas into a processing space between the first electrode and the second electrode; generating a plasma of the first processing gas in the processing space by applying a radio frequency power to the first electrode or the second electrode; and etching a film on the substrate by using the plasma. Further, a resist modification process includes vacuum-evacuating the processing chamber; supplying a second processing gas into the processing space; generating a plasma; and applying a negative DC voltage to the part, the part being disposed away from the substrate in the processing chamber and injecting electrons discharged from the part into the resist pattern on the substrate.
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Citations
20 Claims
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1. A plasma etching method comprising:
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disposing a first electrode and a second electrode in parallel to each other with a gap therebetween in a vacuum evacuable processing chamber; preparing a part in the processing chamber; supporting a substrate to be processed by the second electrode to face the first electrode; vacuum-evacuating the processing chamber to a predetermined pressure; supplying a first processing gas containing an etchant gas into a processing space between the first electrode and the second electrode; generating a plasma of the first processing gas in the processing space by applying a radio frequency power to the first electrode or the second electrode; and etching a film to be processed on the substrate by using the plasma while using as a mask a resist pattern formed on the film, wherein a resist modification process is performed on the substrate in the processing chamber before etching the film and includes; vacuum-evacuating the processing chamber to a desired pressure; supplying a second processing gas into the processing space; generating a plasma of the second processing gas in the processing space by applying the radio frequency power to the first electrode or the second electrode; and applying a negative DC voltage to the part exposed to the plasma, the part being disposed away from the substrate in the processing chamber and injecting electrons discharged from the part into the resist pattern on the substrate to thereby improve an etching resistance of the resist pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 19, 20)
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13. A plasma etching method comprising:
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disposing a first electrode and a second electrode in parallel to each other with a gap therebetween in a vacuum evacuable processing chamber; preparing a part in the processing chamber; supporting a substrate to be processed by the second electrode to face the first electrode; vacuum-evacuating the processing chamber to a predetermined pressure; supplying a processing gas containing an etchant gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio frequency to the first electrode or the second electrode; and etching a film to be processed on the substrate by using the plasma while using as a mask a resist pattern formed on the film, wherein while the film is being etched in the processing chamber, a negative DC voltage is applied to the part exposed to the plasma, the part being disposed away from the substrate in the processing chamber and electrons discharged from the part are injected into the resist pattern to thereby improve an etching resistance of the resist pattern, and wherein a gas pressure in the processing chamber and etching time are selected so as to etch the resist pattern in a desired size in a horizontal direction in parallel with a pattern surface during the etching process of the film. - View Dependent Claims (15, 16, 17, 18)
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14. A plasma etching method comprising:
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disposing a first electrode and a second electrode in parallel to each other with a gap therebetween in a vacuum evacuable processing chamber; preparing a part in the processing chamber; supporting a substrate to be processed by the second electrode to face the first electrode; vacuum-evacuating the processing chamber to a predetermined pressure; supplying a processing gas containing an etchant gas into a processing space between the first electrode and the second electrode; generating a plasma of the processing gas in the processing space by applying a radio frequency power to the first electrode or the second electrode; and etching a film to be processed on the substrate by using the plasma while using as a mask a resist pattern formed on the film, wherein while the film is being etched in the processing chamber, a negative DC voltage is applied to the part exposed to the plasma, the part being disposed away from the substrate in the processing chamber and electrons discharged from the part are injected into the resist pattern to thereby improve an etching resistance of the resist pattern.
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Specification