FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES

• US 20090277587A1
• Filed: 09/15/2008
• Published: 11/12/2009
• Est. Priority Date: 05/09/2008
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Liang, Qiwei, Lubomirsky, Dmitry, Yang, Jang Gyoo
• Application Number:
  US12/210,940
• Publication Number:
  US 20090277587A1
• Time in Patent Office: Days
• US Class Current: 156/345.340
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/507 using external electrodes, e.g. in tunnel type reactors
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.

Claims

1. A substrate processing system comprising:

a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure;

a remote plasma system operable to generate a plasma outside the interior of the processing chamber;

a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and

a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system;

wherein the second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.

2. The substrate processing system of claim 1, wherein a distal portion of the first process gas channel has an annular shape.

3. The substrate processing system of claim 1, wherein a distal portion of the second process gas channel has a cylindrical shape.

4. The substrate processing system of claim 1, wherein the distal end of the second process gas channel is positioned concentrically inside the first process gas channel.

5. The substrate processing system of claim 1, wherein the first and second process gases flow in a substantially parallel direction when they exit the first and second channels.

6. The substrate processing system of claim 1, wherein the first and second process gas channels open into the interior of the processing chamber upstream of a showerhead that partitions the interior of the processing chamber into first and second plasma region.

7. A substrate processing system comprising:

a processing chamber having an interior capable of holding an internal chamber pressure which can be different from an external chamber pressure;

a first conducting surface within the processing chamber;

a second conducting surface within the processing chamber; and

a showerhead positioned between the first conducting surface and the second conducting surface to define a first plasma region and a second plasma region, wherein;

the first plasma region is disposed between the showerhead and the first conducting surface;

the second plasma region is disposed between the showerhead and the second conducting surface;

the showerhead comprises an electrically conducting material and is electrically insulated from the first conducting surface unless an electrical connection is made with an electrical switch; and

the showerhead is electrically insulated from the second conducting surface unless an electrical connection is made with an electrical switch.

8. The substrate processing system of claim 7, further comprising a gas handling system, the gas handling system comprising:

a first channel for conducting a process gas;

a second channel for conducting a treatment gas; and

an RPS for exciting the process gas.

9. The substrate processing system of claim 7, wherein the showerhead is at a similar electrical potential to the first conducting surface resulting in little or no plasma in the first plasma region.

10. The substrate processing system of claim 7, wherein the showerhead is at a similar electrical potential to the second conducting surface resulting in little or no plasma in the second plasma region.

11. The substrate processing system of claim 7, wherein the electrical switch is located outside the processing chamber.

12. The substrate processing system of claim 7, wherein the second conducting surface is held at an electrical ground and the electrical switch has at least two possible positions, wherein:

a first position of the electrical switch connects a radio frequency power supply to the first conducting surface and an electrical ground to the showerhead to create a first plasma in the first plasma region;

a second position of the electrical switch connects the radio frequency power

13. The substrate processing system of claim 7, wherein plasmas in the first plasma region and the second plasma region are created with radio frequency (RF) power supplies.

14. The substrate processing system of claim 7, wherein a plasma is created in one of the two plasma regions at any instant of time.

15. The substrate processing system of claim 7, wherein the substrate processing system comprises a pumping system coupled to the processing chamber and adapted to remove material from the processing chamber.

16. The substrate processing system of claim 7, wherein the system comprises a remote plasma system external to the processing chamber and fluidly coupled to the first plasma region, wherein the remote plasma system is adapted to supply a gas comprising reactants in an excited state, to the first plasma region.

17. A processing chamber partitioned into separate plasma regions, the processing chamber comprising:

a partition that divides the processing chamber into a first plasma region and a second plasma region, wherein each of the regions is operable to contain separate plasmas;

a plurality of holes in the partition to permit gases to pass from the first plasma region to the second plasma region; and

a substrate pedestal occupying a portion of the second plasma region.

18. The processing chamber of claim 17, wherein plasmas in the first plasma region and the second plasma region are inductively coupled.

19. The processing chamber of claim 17, wherein plasmas in the first plasma region and the second plasma region are capacitively coupled.

20. The processing chamber of claim 17, wherein the processing chamber is coupled to a controller operable to execute a program for generating a first plasma in the first plasma region as part of a dielectric deposition process, and generating a second plasma in the second plasma region as part of a curing or cleaning process performed after the first plasma has been stopped.

21. The processing chamber of claim 17, wherein the processing chamber comprises a gas inlet to supply a process gas to the first plasma region.

22. The processing chamber of claim 21, wherein the gas inlet is coupled to a remote plasma system operable to supply a process gas in an excited state to the first plasma region.

23. The processing chamber of claim 21, wherein the gas inlet is fluidly coupled to a fluid supply system operable to supply the process chamber with a process gas comprising at least one gas selected from the group consisting of O₂, O₃, N₂O, NO, NO₂, NH₃, NH₄OH, N_xH_y, silane, disilane, TSA, DSA, H₂, N₂, H₂O₂ and water vapor.

24. The processing chamber of claim 17, wherein the processing chamber comprises one or more nozzles positioned above the substrate pedestal in the second plasma region and operable to deliver a process gas to the second plasma region.

25. The processing chamber of claim 24, wherein the one or more nozzles are fluidly coupled to a fluid supply system operable to supply the processing chamber with a carbon and silicon containing precursor.