STRUCTURE OF SILICON CONTROLLED RECTIFIER
First Claim
1. A structure of a silicon controlled rectifier, comprising:
- a substrate, having a first conductive type;
a well region, formed within the substrate, having a second conductive type;
a first dopant region, formed within the substrate and the well region, and having the first conductive type;
a second dopant region, formed within the substrate and a portion of the well region, and having the second conductive type;
a third dopant region, formed under the second dopant region and having the first conductive type, wherein the second and the third regions forms a vertical Zener diode;
a fourth dopant region, formed within the substrate and separated from the second dopant region, having the second conductive type; and
a fifth dopant region, formed within the substrate in a manner that the fourth dopant region is between the second dopant region and the fifth dopant region, and having the first conductive type, wherein the second dopant region is between the first dopant region and the fourth dopant region.
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Accused Products
Abstract
A silicon controlled rectifier structure is provided in a substrate having a first conductive type. A well region formed within the substrate has a second conductive type. A first dopant region formed within the substrate and the well region has the first conductive type. A second dopant region formed within the substrate and a portion of the well region has the second conductive type. A third dopant region formed under the second dopant region has the first conductive type, in which the second and the third regions form a vertical Zener diode. A fourth dopant region formed within the substrate and separated from the second dopant region by a separation structure has the second conductive type. A fifth dopant region is formed within the substrate in a manner that the fourth dopant region is between the isolation structure and the fifth dopant region, and has the first conductive type.
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Citations
20 Claims
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1. A structure of a silicon controlled rectifier, comprising:
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a substrate, having a first conductive type; a well region, formed within the substrate, having a second conductive type; a first dopant region, formed within the substrate and the well region, and having the first conductive type; a second dopant region, formed within the substrate and a portion of the well region, and having the second conductive type; a third dopant region, formed under the second dopant region and having the first conductive type, wherein the second and the third regions forms a vertical Zener diode; a fourth dopant region, formed within the substrate and separated from the second dopant region, having the second conductive type; and a fifth dopant region, formed within the substrate in a manner that the fourth dopant region is between the second dopant region and the fifth dopant region, and having the first conductive type, wherein the second dopant region is between the first dopant region and the fourth dopant region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A structure of a silicon controlled rectifier, comprising:
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a substrate, having a first conductive type; a well region, formed within the substrate, having a second conductive type; a first dopant region, formed within the substrate and the well region, and having the first conductive type; a second dopant region, formed within the substrate and a portion of the well region, and having the first conductive type; a third dopant region, formed under the second dopant region and having the second conductive type, wherein the second and the third regions forms a vertical Zener diode; a fourth dopant region, formed within the substrate and separated from the second dopant region, having the second conductive type; and a fifth dopant region, formed within the substrate in a manner that the fourth dopant region is between the second dopant region and the fifth dopant region, and having the first conductive type, wherein the second dopant region is between the first dopant region and the fourth dopant region. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification