SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
First Claim
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1. A semiconductor device comprising:
- a substrate;
a MIS FET provided on a surface of the substrate;
an insulating film provided on the substrate to cover the MIS FET;
an opening formed in the insulating film, the opening getting to an impurity diffusing region of the MIS FET;
another opening formed in the insulating film, the another opening getting to a gate electrode of the MIS FET or to an extension part of the gate electrode; and
an electrically conductive member filled into each of the openings, the electrically conductive member including, as a main component, copper;
the insulating film including a layer comprising, as main components, silicon, oxygen, carbon and hydrogen.
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Abstract
Disclosed is a semiconductor device which includes a MIS FET on a surface of a substrate, an insulating film on the substrate to cover the MIS FET, an opening that gets to an impurity diffusing region formed in the insulating film, another opening that gets to a gate electrode or to an extension part of the gate electrode formed in the insulating film, and an electrically conductive member including mainly copper filled in each of the openings. The insulating film includes a layer including, as main components, silicon, oxygen, carbon and hydrogen (FIG. 1).
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Citations
26 Claims
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1. A semiconductor device comprising:
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a substrate; a MIS FET provided on a surface of the substrate; an insulating film provided on the substrate to cover the MIS FET; an opening formed in the insulating film, the opening getting to an impurity diffusing region of the MIS FET; another opening formed in the insulating film, the another opening getting to a gate electrode of the MIS FET or to an extension part of the gate electrode; and an electrically conductive member filled into each of the openings, the electrically conductive member including, as a main component, copper; the insulating film including a layer comprising, as main components, silicon, oxygen, carbon and hydrogen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 16, 17, 20, 21, 23, 25)
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10. A method for fabricating a semiconductor device comprising:
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(a) depositing an insulating film including, as main components, silicon, oxygen, carbon and hydrogen, on a substrate on which a MIS FET is provided, so as to cover the MIS FET; (b) forming, in the insulating film, an opening getting to an impurity diffusing region of the MIS FET and another opening getting to a gate electrode of the MIS FET or an extension part of the gate electrode; (c) depositing a barrier layer and a seed layer in this order on an inner wall of the opening; (d) filling an electrically conductive member including, as a main component, copper, in each of the openings; and (e) removing the electrically conductive member on the insulating film so that an upper surface of the insulating film will be flush with an upper surface of the electrically conductive member. - View Dependent Claims (12, 13, 14, 15, 18, 19, 26)
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11. A method for fabricating a semiconductor device comprising:
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(a) depositing an insulating film including, as main components, silicon, oxygen, carbon and hydrogen, on a semiconductor substrate oil which a MIS FET is provided, so as to cover the MIS FET; (a′
) forming an interconnect layer insulating film on the insulating layer;(b) forming, in the insulating film and in the interconnect layer insulating film, an opening getting to an impurity diffusing region of the MIS FET and another opening getting to a gate electrode or to an extension part of the gate electrode; (c) depositing a barrier layer and a seed layer in this order on an inner wall of the opening; (d) filling an electrically conductive member including, as a main component, copper, in each of the openings; and (e) removing the electrically conductive member on the interconnect layer insulating film so that an upper surface of the interconnect layer insulating film will be flush with an upper surface of the electrically conductive member in the opening.
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22. The semiconductor device according to clam 1, wherein a metal compound is formed on a surface of the impurity diffusing region and on a surface of the gate electrode.
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24. The semiconductor device according to clam 1, wherein a contact of the opening on top of the impurity diffusing region has a slit shape.
Specification