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BONDED INTERMEDIATE SUBSTRATE AND METHOD OF MAKING SAME

  • US 20090278233A1
  • Filed: 07/24/2008
  • Published: 11/12/2009
  • Est. Priority Date: 07/26/2007
  • Status: Abandoned Application
First Claim
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1. A method, comprising:

  • growing a first epitaxial layer of III-nitride material;

    forming a damaged region by implanting ions into an exposed surface of the first epitaxial layer; and

    ;

    growing a second epitaxial layer of III-nitride material on the exposed surface of the first epitaxial layer;

    wherein a level of defects present in the second epitaxial layer is less than a level of defects present in the first epitaxial layer.

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