BONDED INTERMEDIATE SUBSTRATE AND METHOD OF MAKING SAME
First Claim
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1. A method, comprising:
- growing a first epitaxial layer of III-nitride material;
forming a damaged region by implanting ions into an exposed surface of the first epitaxial layer; and
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growing a second epitaxial layer of III-nitride material on the exposed surface of the first epitaxial layer;
wherein a level of defects present in the second epitaxial layer is less than a level of defects present in the first epitaxial layer.
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Abstract
A method includes growing a first epitaxial layer of III-nitride material, forming a damaged region by implanting ions into an exposed surface of the first epitaxial layer, and growing a second epitaxial layer of III-nitride material on the exposed surface of the first epitaxial layer. A level of defects present in the second epitaxial layer is less than a level of defects present in the first epitaxial layer.
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Citations
22 Claims
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1. A method, comprising:
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growing a first epitaxial layer of III-nitride material; forming a damaged region by implanting ions into an exposed surface of the first epitaxial layer; and
;growing a second epitaxial layer of III-nitride material on the exposed surface of the first epitaxial layer; wherein a level of defects present in the second epitaxial layer is less than a level of defects present in the first epitaxial layer. - View Dependent Claims (2)
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3. A method, comprising:
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growing a first epitaxial layer of III-nitride material; forming a weak interface near an exposed surface of the first epitaxial layer by ion implantation; exfoliating a thin layer from the first epitaxial layer; and growing a second epitaxial layer of III-nitride material on an exposed surface of the first epitaxial layer; wherein a level of defects present in the second epitaxial layer is less than a level of defects present in the first epitaxial layer. - View Dependent Claims (4)
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5. A method, comprising:
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forming a weak interface in a single crystal III-nitride material by ion implantation; exfoliating a III-nitride layer from the III-nitride material; and growing a III-nitride epitaxial layer on an exposed surface of the III-nitride material; wherein a level of threading dislocations present in the III-nitride epitaxial layer is at least two orders of magnitude less than a level of threading dislocations present in the single crystal III-nitride material.
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6. A structure, comprising:
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a highly defective, substantially single crystal semiconductor region comprising a defect structure comprising point defects, extended defects or both that induce oscillations in the strain field on length scales smaller than 100 nm; and an epitaxial single crystal semiconductor layer formed on the substantially single crystal semiconductor region; wherein; the defect structure blocks a propagation of at least a majority of dislocations from the substantially single crystal semiconductor region into the epitaxial single crystal semiconductor layer; and the epitaxial single crystal semiconductor layer contains a lower density of dislocations than the substantially single crystal semiconductor region. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A method, comprising:
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forming a defect structure comprising point defects, extended defects or both that induce oscillations in the strain field on length scales smaller than 100 nm in a single crystal semiconductor region by ion implantation; and epitaxially growing a single crystal semiconductor layer on the crystal semiconductor region containing the defect structure; wherein; the defect structure blocks a propagation of at least a majority of dislocations from the single crystal semiconductor region containing the defect structure into the single crystal semiconductor layer; and the single crystal semiconductor layer contains a lower density of dislocations than the single crystal semiconductor region containing the defect structure. - View Dependent Claims (13, 14, 15, 16)
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17. A method, comprising:
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providing substantially single crystal or single crystal III-nitride semiconductor material; forming a damaged region by implanting ions into an exposed surface of the semiconductor material; and growing an epitaxial layer of III-nitride semiconductor material on the exposed surface of the semiconductor material; wherein a level of defects present in the epitaxial layer is less than a level of defects present in the semiconductor material.
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18. A method, comprising:
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forming a weak interface in a single crystal III-nitride semiconductor material by ion implantation; exfoliating a III-nitride layer from the III-nitride semiconductor material; and growing an epitaxial III-nitride semiconductor layer on an exposed surface of the exfoliated III-nitride layer; wherein the III-nitride epitaxial layer has a defect density below 2×
104 cm−
2. - View Dependent Claims (19)
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20. A structure, comprising:
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a substrate; and an epitaxial single crystal III-nitride semiconductor layer formed on the substrate, wherein III-nitride epitaxial layer has a defect density below 2×
104 cm−
2. - View Dependent Claims (21, 22)
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Specification