SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a conductive layer;
a first layer over the conductive layer, the first layer including an organic resin and a fibrous body;
a second layer over the first layer, the second layer including an organic resin and a fibrous body; and
a semiconductor integrated circuit between the first layer and the second layer.
1 Assignment
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Accused Products
Abstract
To reduce defects of a semiconductor device, such as defects in shape and characteristic due to external stress and electrostatic discharge. To provide a highly reliable semiconductor device. In addition, to increase manufacturing yield of a semiconductor device by reducing the above defects in the manufacturing process. The semiconductor device includes a semiconductor integrated circuit sandwiched by impact resistance layers against external stress and an impact diffusion layer diffusing the impact and a conductive layer covering the semiconductor integrated circuit. With the use of the conductive layer covering the semiconductor integrated circuit, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit can be prevented.
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Citations
31 Claims
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1. A semiconductor device comprising:
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a conductive layer; a first layer over the conductive layer, the first layer including an organic resin and a fibrous body; a second layer over the first layer, the second layer including an organic resin and a fibrous body; and a semiconductor integrated circuit between the first layer and the second layer. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a conductive layer; a first layer over the conductive layer, the first layer including an organic resin and a fibrous body; a second layer over the first layer; a third layer over the second layer, the third layer including an organic resin and a fibrous body; a fourth layer over the third layer; and a semiconductor integrated circuit between the second layer and the third layer, wherein the second layer has a lower modulus of elasticity and higher breaking strength than the first layer, and wherein the fourth layer has a lower modulus of elasticity and higher breaking strength than the third layer. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a conductive layer; a first layer over the conductive layer; a second layer over the conductive layer, the second layer including a fibrous body and an organic resin; a third layer over the second layer, the third layer including a fibrous body and an organic resin; a fourth layer over the third layer; and a semiconductor integrated circuit between the second layer and the third layer, wherein the first layer has a lower modulus of elasticity and higher breaking strength than the second layer, and wherein the fourth layer has a lower modulus of elasticity and higher breaking strength than the third layer. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A semiconductor device comprising:
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a semiconductor integrated circuit sandwiched between a first impact resistance layer and a second impact resistance layer; and a conductive layer on a side opposite to a side where the semiconductor integrated circuit is provided, of the first impact resistance layer. - View Dependent Claims (21, 22, 23, 24, 25)
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26. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a separation layer over a substrate; forming a semiconductor integrated circuit over the separation layer; attaching a first layer to the semiconductor integrated circuit and attaching a second layer to the first layer, the first layer interposed between the semiconductor integrated circuit and the second layer; separating the semiconductor integrated circuit from the substrate; attaching a third layer to the semiconductor integrated circuit separated from the substrate and attaching a fourth layer to the third layer, the third layer being interposed between the semiconductor integrated circuit and the fourth layer; and forming a conductive layer so that the conductive layer and the semiconductor integrated circuit are electrically insulated from each other, wherein the first layer includes an organic resin and a fibrous body, and wherein the third layer includes an organic resin and a fibrous body. - View Dependent Claims (27, 28, 29, 30)
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31. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a separation layer over a substrate; forming a semiconductor integrated circuit over the separation layer, the semiconductor integrated circuit including an antenna; attaching a first impact resistance layer to the semiconductor integrated circuit; separating the semiconductor integrated circuit from the substrate; attaching a second impact resistance layer to the semiconductor integrated circuit separated from the substrate, wherein the semiconductor integrated circuit is interposed between the first impact resistance layer and the second impact resistance layer; and forming a conductive layer so that the conductive layer and the semiconductor integrated circuit are electrically insulated from each other, wherein the first impact resistance layer includes an organic resin and a fibrous body, and wherein the second impact resistance layer includes an organic resin and a fibrous body.
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Specification