Electronic element wafer module and method for manufacturing electronic element wafer module, electronic element module, and electronic information device

• US 20090283311A1
• Filed: 05/01/2009
• Published: 11/19/2009
• Est. Priority Date: 05/14/2008
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Ida, Tohru
• Application Number:
  US12/387,433
• Publication Number:
  US 20090283311A1
• Time in Patent Office: Days
• US Class Current: 174/260
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13022 the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13024 the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

An electronic element wafer module is provided, and the module includes: electronic element wafers, in which a plurality of electronic elements are provided on the front surface side and wiring is provided on the back surface side; and support substrates adhered by a resin adhesive layer, opposing the front surface side of the electronic element wafer, where: a groove for dicing is formed along a dicing line in between adjacent electronic elements, penetrating the electronic element wafers from the back surface; and an insulation film for insulating a semiconductor layer from the wiring on the back surface is formed on the back surface of the electronic element wafer including the through hole and is formed at least on a side wall of the groove.

Claims

1. An electronic element wafer module, comprising:

electronic element wafers, in which a plurality of electronic elements are provided on a front surface side and wiring is provided on a back surface side, the wiring being electrically connected to wiring or a terminal section on the front surface side through a through hole penetrating through both surfaces; and

support substrates adhered by a resin adhesive layer, opposing the front surface side of the electronic element wafer,

wherein;

a groove for dicing is formed along a dicing line in between adjacent electronic elements, penetrating the electronic element wafers from the back surface; and

an insulation film for insulating a semiconductor layer from the wiring on the back surface is formed on the back surface of the electronic element wafer including the through hole and is formed at least on a side wall of the groove.

2. An electronic element wafer module according to claim 1, wherein an electrode pad is provided as the wiring or terminal section in a periphery of the electronic element, and the electrode pad is connected to the wiring on the back surface through the through hole.

3. An electronic element wafer module according to claim 1, wherein the insulation film insulates an electric connection layer in the through hole and an inner wall of the through hole, the through hole being for electrically connecting the electrode pad provided in a periphery of the electronic element and the wiring or an external connection terminal.

4. An electronic element wafer module according to claim 1, wherein a back surface protection film is provided at least on the through hole on the back surface and the wiring.

5. An electronic element wafer module according to claim 1, wherein a bottom surface of the groove is either covered by the insulation film or removed.

6. An electronic element wafer module according to claim 5, wherein the bottom surface of the groove is located either on the support substrate or in the support substrate.

7. An electronic element wafer module according to claim 4, wherein the back surface protection film covers at least the side wall of the side wall and bottom surface of the groove.

8. An electronic element wafer module according to claim 4, wherein the back surface protection film is buried inside the groove.

9. An electronic element wafer module according to claim 1, wherein the support substrate is a transparent resin substrate or a transparent glass substrate as a transparent member.

10. An electronic element wafer module according to claim 1, wherein the insulation film is a photosensitive resin film, a Si oxide film, a boron or phosphor containing oxide film, Si oxynitride film, Si nitride film, or a laminated layer comprised of at least two types thereof, or a film formed with electrodeposition material.

11. An electronic element wafer module according to claim 10, wherein the photosensitive resin film is a polyimide resin, an epoxy resin or a acrylic resin.

12. An electronic element wafer module according to claim 10, wherein the electrodeposition material is a polyimide resin, an epoxy resin, a acrylic resin, a polyamine resin, or a polycarboxylic acid resin.

13. An electronic element wafer module according to claim 1, wherein an insulation film is further provided to insulate the wiring or terminal section from the semiconductor layer on the front surface of the electronic element wafer, and the insulation film is a Si oxide film, a boron or phosphor containing oxide film, Si oxynitride film, Si nitride film, or a laminated layer comprised of at least two types thereof.

14. An electronic element wafer module according to claim 4, wherein the back surface protection film is formed of a photosensitive resin film.

15. An electronic element wafer module according to claim 14, wherein the photosensitive resin film is a polyimide resin, an epoxy resin, a acrylic resin, a silicone resin, or a mixed resin comprised of at least two types thereof.

16. An electronic element wafer module according to claim 1, wherein the electronic element is an image capturing element including a plurality of light receiving sections for performing a photoelectric conversion on and capturing an image light from a subject.

17. An electronic element wafer module according to claim 1, wherein the electronic element includes a light emitting element for generating an output light and a light receiving element for receiving an incident light.

18. An electronic element wafer module according to claim 9, further including one or a plurality of laminated wafer-state optical apparatuses adhered and fixed on the transparent member in such a manner to correspond to each of the plurality of electronic elements.

19. An electronic element wafer module according to claim 18, wherein the one or a plurality of laminated wafer-state optical apparatuses are lens modules, and the electronic elements are image capturing elements.

20. An electronic element wafer module according to claim 18, wherein the one or a plurality of laminated wafer-state optical apparatuses are either prism modules or hologram element modules, and the electronic elements are light emitting elements and light receiving elements.

27. An electronic element module individually separated by cutting off every one or a predetermined number from the electronic element wafer module according to claim 1.

28. An electronic information device including the electronic element module, which is cut off from the electronic element wafer module according to claim 19, as a sensor module in an image capturing section.

29. An electronic information device including the electronic element module, which is cut off from the electronic element wafer module according to claim 20, in an information recording and reproducing section.

21. A method for manufacturing an electronic element wafer module, comprising:

a step of laminating a support substrate opposing a front surface side of an electronic element wafer by a resin adhesive layer, the electronic element wafer having a plurality of electronic elements formed thereon;

a through hole and groove forming step of forming a through hole, which penetrates through both surfaces of the electronic element wafer, for each electronic element and forming a groove for dicing, which penetrates the electronic element wafer from a back surface along a dicing line in between adjacent electronic elements;

an insulation film forming step of forming an insulation film on the back surface of the electronic element wafer including the through hole and the groove; and

a wiring layer forming step of forming a wiring layer on the insulation film, the wiring layer electrically connecting with wiring or a terminal section on the front surface side of the electronic element wafer through the through hole.

22. A method for manufacturing an electronic element wafer module according to claim 21, further including a back surface protection film forming step of forming a back surface protection film on at least the wiring layer and the through hole.

23. A method for manufacturing an electronic element wafer module according to claim 21, further including an insulation film removing step of removing an insulation film on a bottom surface of the groove subsequent to the insulation film forming step.

24. A method for manufacturing an electronic element wafer module according to claim 21, wherein the through hole and groove forming step forms the groove such that a bottom surface of the groove is located on the support substrate or in the support substrate.

25. A method for manufacturing an electronic element wafer module according to claim 22, wherein the back surface protection film forming step buries the through hole with the back surface protection film and forms the back surface protection film on the groove or on an area other than the groove.

26. A method for manufacturing an electronic element wafer module according to claim 22, wherein the back surface protection film forming step forms the back surface protection film in such a manner to bury the through hole and the groove.