METHOD FOR MANUFACTURING COORDINATE DETECTOR

• US 20090283498A1
• Filed: 05/13/2009
• Published: 11/19/2009
• Est. Priority Date: 05/19/2008
• Status: Active Grant

• Current Assignee: Fujitsu Component Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Component Limited (Fujitsu Limited)
• Inventors: Kondoh, Koichi
• Granted Patent: US 8,119,332 B2
• Time in Patent Office: Days
• US Class Current: 216/65
• CPC Class Codes: G06F 2203/04113 Peripheral electrode pattern in resistive digitisers, i.e. electrodes at the periphery of the resistive sheet are shaped in patterns enhancing linearity of induced field
• CPC Class Codes: G06F 3/045 using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact

Abstract

A method for manufacturing a coordinate detector having a resistive film formed on a substrate formed of an insulating material and a common electrode for applying a voltage to the resistive film. The substrate includes a quadrangular shape. The method includes the steps of a) forming first resistive film removal regions by removing predetermined first regions of the resistive film provided along a peripheral edge of the substrate, b) forming the common electrode on the first resistive film removal regions, c) applying voltage to the resistive film, d) measuring an electric potential of the resistive film, e) calculating second resistive film removal region data according to the measured electric potential, and f) forming second resistive film removal regions by irradiating a laser beam to predetermined second regions of the resistive film according to the calculated second resistive film removal region data.

Claims

1. A method for manufacturing a coordinate detector having a resistive film formed on a substrate formed of an insulating material and a common electrode for applying a voltage to the resistive film, the substrate having a quadrangular shape, the method comprising the steps of:

a) forming first resistive film removal regions by removing predetermined first regions of the resistive film provided along a peripheral edge of the substrate;

b) forming the common electrode on the first resistive film removal regions;

c) applying voltage to the resistive film;

d) measuring an electric potential of the resistive film;

e) calculating second resistive film removal region data according to the measured electric potential; and

f) forming second resistive film removal regions by irradiating a laser beam to predetermined second regions of the resistive film according to the calculated second resistive film removal region data.

2. The method as claimed in claim 1, further comprising the steps of:

storing the second resistive film removal region data; and

repeating the step f) according to the stored second resistive film removal region data.

3. The method as claimed in claim 1, further comprising the steps of:

placing the substrate on a moving table that is movable in at least two-dimensional directions; and

moving the moving table while irradiating the laser beam according to the calculated second resistive film removal region data.

4. The method as claimed in claim 1, wherein the resistive film includes Indium Tin Oxide (ITO), indium oxide, tin oxide, zinc oxide or antimony trioxide.

5. The method as claimed in claim 1, wherein the substrate and the resistive film exhibit a transparent property in a visible range of wavelengths.

6. The method as claimed in claim 1, wherein the wavelength of the laser beam ranges from 340-420 nm.