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PHOTOELECTROCHEMICAL ETCHING OF P-TYPE SEMICONDUCTOR HETEROSTRUCTURES

  • US 20090283800A1
  • Filed: 05/12/2009
  • Published: 11/19/2009
  • Est. Priority Date: 05/12/2008
  • Status: Active Grant
First Claim
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1. A method for etching a p-type semiconductor layer in a device structure, comprising:

  • etching the p-type layer using an internal electric field of the device structure.

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