PHOTOELECTROCHEMICAL ETCHING OF P-TYPE SEMICONDUCTOR HETEROSTRUCTURES
First Claim
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1. A method for etching a p-type semiconductor layer in a device structure, comprising:
- etching the p-type layer using an internal electric field of the device structure.
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Abstract
A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.
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23 Claims
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1. A method for etching a p-type semiconductor layer in a device structure, comprising:
etching the p-type layer using an internal electric field of the device structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A heterostructure, comprising:
(a) a p-type semiconductor having an etched surface, wherein damage to the p-type semiconductor etched by photoelectrochemical etching is lower as compared to a p-type semiconductor etched by ion-assisted plasma etching or dry etching. - View Dependent Claims (20, 21, 22, 23)
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