Anti-Reflection Structures For CMOS Image Sensors
First Claim
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1. A semiconductor structure comprising:
- a photodiode located on a first surface of a semiconductor layer;
a metal interconnect layer located on said first surface of said semiconductor layer; and
an insulator layer located on a second surface of said semiconductor layer, wherein said second surface is located on an opposite side of said first surface, and wherein said insulator layer includes an array of protuberances at an interface with an ambient gas or vacuum.
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Abstract
Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
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Citations
35 Claims
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1. A semiconductor structure comprising:
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a photodiode located on a first surface of a semiconductor layer; a metal interconnect layer located on said first surface of said semiconductor layer; and an insulator layer located on a second surface of said semiconductor layer, wherein said second surface is located on an opposite side of said first surface, and wherein said insulator layer includes an array of protuberances at an interface with an ambient gas or vacuum. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor structure comprising:
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a photodiode located in a semiconductor layer; a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode; an interconnect level dielectric layer embedding a metal line and located on said semiconductor layer; and a protuberance-containing dielectric portion located directly on said interconnect level dielectric layer, wherein said protuberance-containing dielectric portion comprises an array of an array of protuberances. - View Dependent Claims (9, 10, 11, 12, 13, 14, 21)
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15. A semiconductor structure comprising:
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a photodiode located in a semiconductor layer; a transistor located on said semiconductor layer, wherein a source of said transistor is of integral construction with said photodiode; and a dielectric layer located overlying said photodiode, laterally surrounding and overlying a gate electrode of said transistor, and comprising a protuberance-containing dielectric portion which overlies said photodiode and includes an array of protuberances. - View Dependent Claims (16, 17, 18, 19, 20)
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22. A semiconductor structure comprising:
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a photodiode located in a semiconductor layer; a dielectric material layer containing a lens and located over said photodiode, whreiein said lens is located in an optical path of said photodiode; and a protuberance-containing dielectric portion located directly on said dielectric material layer, wherein said protuberance-containing dielectric portion comprises an array of protuberances. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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29. A semiconductor structure comprising:
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a semiconductor chip; and a package housing encapsulating said semiconductor chip and including an optically transparent window, said window comprising a first array of protuberances on a front surface and a second set of protuberances on a back surface. - View Dependent Claims (30, 31, 32, 33, 34, 35)
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Specification