System, Structure, and Method of Manufacturing a Semiconductor Substrate Stack
First Claim
1. An integrated circuit comprising:
- a substrate having an active region formed therein;
a via extending through the substrate, having a first termination substantially aligned with a bottom surface of the substrate and a second termination substantially aligned to a top surface of the substrate;
a first conductive contact electrically connected to the second termination of the via and electrically connected to a conductive interconnect layer; and
a second conductive contact electrically connected to the conductive interconnect layer and the active region.
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Accused Products
Abstract
A method of manufacturing a semiconductor substrate structure for use in a semiconductor substrate stack system is presented. The method includes a semiconductor substrate which includes a front-face, a backside, a bulk layer, an interconnect layer that includes a plurality of inter-metal dielectric layers sandwiched between conductive layers, a contact layer that is between the bulk layer and the interconnect layer, and a TSV structure commencing between the bulk layer and the contact layer and terminating at the backside of the substrate. The TSV structure is electrically coupled to the interconnect layer and the TSV structure is electrically coupled to a bonding pad on the backside.
142 Citations
37 Claims
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1. An integrated circuit comprising:
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a substrate having an active region formed therein; a via extending through the substrate, having a first termination substantially aligned with a bottom surface of the substrate and a second termination substantially aligned to a top surface of the substrate; a first conductive contact electrically connected to the second termination of the via and electrically connected to a conductive interconnect layer; and a second conductive contact electrically connected to the conductive interconnect layer and the active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor substrate structure, the structure comprising:
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a backside; a front-face; a bulk layer; an interconnect layer, wherein the interconnect layer includes a plurality of conductive layers sandwiched between inter-metal dielectric layers; a contact layer, wherein the contact layer is between the bulk layer and the interconnect layer; and a through substrate via (TSV) commencing between the bulk layer and the contact layer and terminating at the backside of the bulk layer, wherein the TSV is electrically coupled to the interconnect layer, and wherein the TSV is electrically coupled to the backside. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A system of stacked semiconductor substrates, the system comprising:
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a first substrate including; a backside; a front-face; a bulk layer, wherein the bulk layer comprises a semiconductor material; a contact layer, wherein the contact layer is between the bulk layer and an interconnect layer; an interconnect layer, wherein the interconnect layer includes a plurality of inter-metal dielectric layers sandwiched between a plurality of conductive layers; a lined TSV commencing between the contact layer and terminating at the backside, wherein the lined TSV is electrically coupled to the interconnect layer and wherein the lined TSV is electrically coupled to a bonding pad on the backside; and a bonding joint, wherein the bonding joint is on the front-face and is electrically connected to the interconnect layer; and a second substrate bonded to the first substrate at the bonding joint. - View Dependent Claims (19, 20)
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21. A method of manufacturing a stacked substrate structure, the method comprising:
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etching a front-face of a first substrate to create a through substrate via (TSV), at a step before contact etch; forming an at least a first contact between the TSV and an interconnect layer; forming an at least a second contact between an active region and the interconnect layer; thinning a backside of the first substrate to expose the TSV; filling the TSV with a conductive material; and disposing a backside bonding pad, wherein the backside bonding pad is electrically coupled to the TSV. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification