TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCTION THEREOF

• US 20090286071A1
• Filed: 03/30/2009
• Published: 11/19/2009
• Est. Priority Date: 05/13/2008
• Status: Abandoned Application

• Current Assignee: Nitto Denko Corporation
• Original Assignee: Nitto Denko Corporation
• Inventors: SASA, Kazuaki
• Application Number:
  US12/414,098
• Publication Number:
  US 20090286071A1
• Time in Patent Office: Days
• US Class Current: 428/336
• CPC Class Codes: C08J 2343/04 Homopolymers or copolymers of monomers containing silicon
• CPC Class Codes: C08J 7/044 Forming conductive coatings; Forming coatings having anti-static properties
• CPC Class Codes: C08J 7/048 Forming gas barrier coatings
• CPC Class Codes: C23C 14/022 by means of bombardment with energetic particles or radiation
• CPC Class Codes: C23C 14/081 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: C23C 14/562 for coating elongated substrates
• CPC Class Codes: C23C 28/042 including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
• CPC Class Codes: H01B 1/08 oxides
• CPC Class Codes: H10K 2101/00 Properties of the organic materials covered by group H10K85/00
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/816 Multilayers, e.g. transparent multilayers
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

the transparent conductive film of the present invention is a transparent conductive film, comprising: an organic polymer film substrate; a first oxide thin film with a high visible-light transmittance formed on the organic polymer film substrate; and a ZnO-based transparent conductive thin film formed on the first oxide thin film, wherein the first oxide thin film has an oxygen content corresponding to 60 to 90% of the stoichiometric value before the ZnO-based transparent conductive thin film is formed. The transparent conductive film exhibits low resistance even when the ZnO-based transparent conductive thin film is relatively thin (particularly 100 nm or less in thickness), and has a low rate of change in resistance value even under a humidification and heating environment.

Claims

1. A transparent conductive film, comprising:

an organic polymer film substrate;

a first oxide thin film with a high visible-light transmittance formed on the organic polymer film substrate; and

a ZnO-based transparent conductive thin film formed on the first oxide thin film, wherein

the first oxide thin film has an oxygen content corresponding to 60 to 90% of the stoichiometric value before the ZnO-based transparent conductive thin film is formed.

2. The transparent conductive film according to claim 1, wherein the resistance value of the ZnO-based transparent conductive thin film after heating in air at 150°

C. for 1 hour is 10% or more lower than the resistance value of it immediately after it is formed.

3. The transparent conductive film according to claim 1, wherein the ZnO-based transparent conductive thin film is a ZnO thin film doped with one or more elements selected from Al, Ga, B, and In.

4. The transparent conductive film according to claim 1, wherein the first oxide thin film is an aluminum oxide thin film or a silicon oxide thin film.

5. The transparent conductive film according to claim 1, further comprising a second oxide thin film with a high visible-light transmittance formed on the ZnO-based transparent conductive thin film.

6. The transparent conductive film according to claim 5, wherein the second oxide thin film has a water-vapor transmission rate of 1.0 g/m² per day or less as measured by a MOCON method under the conditions of an atmosphere temperature of 40°

C. and a relative humidity of 90%.

7. The transparent conductive film according to claim 1, wherein the ZnO-based transparent conductive thin film has a thickness of 10 nm to 100 nm.

8. A method for producing the transparent conductive film according to claim 1, comprising forming the first oxide thin film by a reactive dual magnetron sputtering method.