MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE INCLUDING ACTIVE LAYER OF ZINC OXIDE WITH CONTROLLED CRYSTAL LATTICE SPACING

• US 20090286351A1
• Filed: 07/27/2009
• Published: 11/19/2009
• Est. Priority Date: 06/02/2006
• Status: Active Grant

• Current Assignee: Casio Computer Company Limited, Kochi Industrial Promotion Center
• Original Assignee: Casio Computer Company Limited, Kochi Industrial Promotion Center
• Inventors: FURUTA, Hiroshi, HIRAO, Takashi, MATSUDA, Tokiyoshi, HIRAMATSU, Takahiro, FURUTA, Mamoru
• Granted Patent: US 7,993,964 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A manufacturing method of a semiconductor device includes forming an oxide semiconductor thin film layer of zinc oxide, wherein at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d₀₀₂ of at least 2.619 Å.

Claims

1. A manufacturing method of a semiconductor device comprising:

providing a substrate; and

depositing an oxide semiconductor thin film layer of zinc oxide on the substrate such that at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes (002) lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d₀₀₂ of at least 2.619 Å

.

2. The manufacturing method of a semiconductor device according to claim 1, wherein the entire oxide semiconductor thin film layer includes (002) lattice planes having a preferred orientation along the direction perpendicular to the substrate and a lattice spacing d₀₀₂ of at least 2.619 Å

.

3. The manufacturing method of a semiconductor device according to claim 1, wherein a portion of the oxide semiconductor thin film layer which is in contact with the substrate includes (002) lattice planes having a preferred orientation along the direction perpendicular to the substrate and a lattice spacing d₀₀₂ of at least 2.619 Å

.

4. The manufacturing method of a semiconductor device according to claim 1, wherein the lattice spacing d₀₀₂ of the (002) lattice planes of the oxide semiconductor thin film layer in the as-deposited state is at least 2.625 Å

.

5. A manufacturing method of a semiconductor device comprising:

providing a substrate;

depositing an oxide semiconductor thin film layer of zinc oxide, such that at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes (002) lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d₀₀₂ of at least 2.619 Å

; and

depositing contact layers to be in contact with the oxide semiconductor thin film layer, such that at least a portion of each of the contact layers in an as-deposited state includes (002) lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d₀₀₂ that is smaller than the lattice spacing d₀₀₂ of the (002) planes of the oxide semiconductor thin film layer.

6. The manufacturing method of a semiconductor device according to claim 5, wherein the entire oxide semiconductor thin film layer includes (002) lattice planes having a preferred orientation along the direction perpendicular to the substrate and a lattice spacing d₀₀₂ of at least 2.619 Å

.

7. The manufacturing method of a semiconductor device according to claim 5, wherein a portion of the oxide semiconductor thin film layer which is in contact with the substrate includes (002) lattice planes having a preferred orientation along the direction perpendicular to the substrate and a lattice spacing d₀₀₂ of at least 2.619 Å

.

8. The manufacturing method of a semiconductor device according to claim 5, wherein the lattice spacing d₀₀₂ of the (002) lattice planes of the contact layers in the as-deposited state is not more than 2.605 Å

.

9. The manufacturing method of a semiconductor device according to claim 5, wherein the lattice spacing d₀₀₂ of the (002) lattice planes of the oxide semiconductor thin film layer in the as-deposited state is at least 2.625 Å

, and the lattice spacing d₀₀₂ of the (002) lattice planes of the contact layers in the as-deposited state is not more than 2.619 Å

.

10. The manufacturing method of a semiconductor device according to claim 9, wherein the lattice spacing d₀₀₂ of the (002) lattice planes of the contact layers in the as-deposited state is not more than 2.605 Å

.

11. A manufacturing method of a semiconductor device comprising:

providing a substrate;

depositing, on the substrate, an oxide semiconductor thin film layer of zinc oxide, such that at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes (002) lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing of at least 2.619 Å

;

doping a plurality of regions of the oxide semiconductor thin film layer with ions that act as donors to zinc oxide to form second regions which are doped with the ions, such that a first region of the oxide semiconductor thin film layer is defined as a region other than the second regions; and

subjecting the second regions to an activation treatment.

12. The manufacturing method of a semiconductor device according to claim 11, wherein the entire oxide semiconductor thin film layer includes (002) lattice planes having a preferred orientation along the direction perpendicular to the substrate and a lattice spacing d₀₀₂ of at least 2.619 Å

.

13. The manufacturing method of a semiconductor device according to claim 11, wherein a portion of the oxide semiconductor thin film layer which is in contact with the substrate includes (002) lattice planes having a preferred orientation along the direction perpendicular to the substrate and a lattice spacing d₀₀₂ of at least 2.619 Å

.

14. The manufacturing method of a semiconductor device according to claim 11, wherein the activation treatment includes a heat treatment.

15. The manufacturing method of a semiconductor device according to claim 11. wherein the lattice spacing d₀₀₂ of the (002) lattice planes of the oxide semiconductor thin film layer in the as-deposited state is at least 2.625 Å

.

16. The manufacturing method of a semiconductor device according to claim 11, further comprising:

forming source/drain electrodes coupled to the oxide semiconductor thin film layer;

forming a gate insulator; and

forming a gate electrode on the gate insulator;

wherein the oxide semiconductor thin film layer, the source/drain electrodes, the gate insulator and the gate electrode function as a thin film transistor in which the first region of the oxide semiconductor thin film layer functions as a channel.

17. The manufacturing method of a semiconductor device according to claim 16, further comprising uncovering the second regions of the oxide semiconductor thin film layer by removing the gate insulator from the second regions of the oxide semiconductor thin film layer using the gate electrode as a mask.

18. The manufacturing method of a semiconductor device according to claim 17, wherein the doping of the oxide semiconductor thin film layer with the ions that act as donors to zinc oxide to form the second regions is performed after the uncovering of the second regions of the oxide semiconductor thin film layer.

19. The manufacturing method of a semiconductor device according to claim 11, wherein the doping of at least a part of the second regions of the oxide semiconductor thin film layer is performed using ions obtained by ionizing at least one group III element.

20. The manufacturing method of a semiconductor device according to claim 17, wherein the activation treatment is performed by forming an insulating film on the uncovered second regions.