PLASMA PROCESS WITH PHOTORESIST MASK PRETREATMENT

• US 20090286400A1
• Filed: 05/13/2008
• Published: 11/19/2009
• Est. Priority Date: 05/13/2008
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Heo, Dongho, Kim, Ji Soo
• Granted Patent: US 8,277,670 B2
• Time in Patent Office: Days
• US Class Current: 438/694
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00

Abstract

A method for etching features in a dielectric layer through a photoresist (PR) mask is provided. The PR mask is patterned using laser light having a wavelength not more than 193 nm. The PR mask is pre-treated with a noble gas plasma, and then a plurality of cycles of a plasma process is provided. Each cycle includes a deposition phase that deposits a deposition layer over the PR mask, the deposition layer covering a top and sidewalls of mask features of the PR mask, and a shaping phase that shapes the deposition layer deposited over the PR mask.

Claims

1. A method for etching features in a dielectric layer through a photoresist (PR) mask, the PR mask being patterned using laser light having a wavelength not more than 193 nm, said method comprising:

pre-treating the PR mask with a noble gas plasma; and

providing a plurality of cycles, wherein each cycle comprises;

a deposition phase that deposits a deposition layer over the PR mask, the deposition layer covering a top and sidewalls of mask features of the PR mask; and

a shaping phase that shapes the deposition layer deposited over the PR mask.

2. The method as recited in claim 1, wherein the noble gas comprises Ar.

3. The method as recited in claim 1, wherein the pre-treating the PR mask comprising:

providing the noble gas;

forming a plasma from the noble gas; and

stopping a flow of the noble gas.

4. The method as recited in claim 3, wherein the forming the plasma comprises:

providing a high frequency of 60 MHz or greater.

5. The method as recited in claim 4, wherein the forming the plasma does not provide RF energy with a frequency less than 50 MHz.

6. The method as recited in claim 4, wherein the forming the plasma further comprises:

providing a power less than 500 W.

7. The method as recited in any one of claims 3, wherein a gas flow of the noble gas has 100 sccm or greater.

8. The method as recited in any one of claims 1, wherein the deposition phase provides a high frequency of 60 MHz or greater.

9. The method as recited in claim 8, wherein the deposition phase does not provide RF energy with a frequency less than 50 MHz.

10. The method as recited in any one of claims 1, wherein the shaping phase provides a high frequency of 60 MHz or greater.

11. The method as recited in claim 10, wherein the shaping phase does not provide RF energy with a frequency less than 50 MHz.

12. The method as recited in any one of claims 1,

wherein the deposition phase also etches features into the dielectric layer, and further deposits the deposition layer on sidewalls of the etched features, and

wherein the shaping phase removes the deposition layer.

13. The method as recited in claim 12,

wherein deposition phase selectively etches the dielectric layer with respect to the PR mask, and

wherein the shaping phase selectively removes the deposition layer on the sidewalls with respect to the dielectric layer.

14. The method, as recited in claim 13, wherein the deposition-etch phase does not remove the photoresist mask, providing an infinite selectivity.

15. The method as recited in any one of claims 1,

wherein the deposition phase further deposits the deposition layer on a bottom of the mask features,

wherein the shaping phase further removes the deposition layer from the bottom of the mask features without etching the dielectric layer thereunder, leaving sidewalls to shrink a CD of the PR mask, and

wherein the method further comprises:

etching the dielectric layer using the PR mask with the CD shrunk by providing the plurality of cycles.

16. The method as recited in any one of claims 1,

wherein the deposition phase further deposits the deposition layer on a bottom of the mask features,

wherein the shaping phase further removes the deposition layer from the bottom and sidewall of the mask features without etching the dielectric layer thereunder so as to trim the sidewall, and

wherein the method further comprises:

etching the dielectric layer using the PR mask trimmed by providing the plurality of cycles.

17. The method as recited in claim 9, wherein the shaping phase selectively etches back sidewalls of the mask features in isolate areas with respect to dens areas of the mask features.

18. The method as recited in any one of claims 1,

wherein an antireflection layer (ARL) is formed over the dielectric layer below the patterned PR mask, and

wherein in each cycle, the shaping phase first etches the ARL in a bottom of the mask features and trims the PR mask, and the deposition phase deposits the deposition layer on the PR mask and further etches the ARL in the bottom of the mask features.

19. An apparatus for etching features in a dielectric layer through a photoresist (PR) mask, the PR mask being patterned using laser light having a wavelength not more than 193 nm, the apparatus comprising:

a plasma processing chamber, comprising;

a chamber wall forming a plasma processing chamber enclosure;

a substrate support for supporting a substrate within the plasma processing chamber enclosure;

a pressure regulator for regulating the pressure in the plasma processing chamber enclosure;

at least one electrode for providing power to the plasma processing chamber enclosure for sustaining a plasma;

a gas inlet for providing gas into the plasma processing chamber enclosure; and

a gas outlet for exhausting gas from the plasma processing chamber enclosure;

a gas source in fluid connection with the gas inlet, comprising;

an etch gas source;

a deposition phase gas source;

a shaping phase gas source; and

a pretreatment gas source; and

a controller controllably connected to the gas source and the at least one electrode, comprising;

at least one processor; and

computer readable media, comprising;

computer readable code for pre-treating the PR mask with a noble gas plasma, comprising;

computer readable code for providing a noble gas from the pretreatment gas source;

computer readable code for forming a plasma from the noble gas; and

computer readable code for stopping a flow of the noble gas; and

computer readable code for providing a plurality of cycles, each cycle including a deposition phase and a shaping phase, the computer readable code comprising;

computer readable code for providing a deposition phase gas from the deposition phase gas source;

computer readable code for forming a plasma from the deposition phase gas so as to deposit a deposition layer over the PR mask, the deposition layer covering a top and sidewalls of mask features of the PR mask;

computer readable code for stopping a flow of the deposition phase gas;

computer readable code for providing a shaping phase gas from the shaping phase gas source;

computer readable code for forming a plasma from the shaping phase gas so as to shape the deposition layer deposited over the PR mask; and

computer readable code for stopping a flow of the shaping phase gas.