METHOD FOR CRITICAL DIMENSION SHRINK USING CONFORMAL PECVD FILMS

• US 20090286402A1
• Filed: 10/23/2008
• Published: 11/19/2009
• Est. Priority Date: 05/13/2008
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Xia, Li-Qun, Balseanu, Mihaela, McClintock, William H., Naik, Mehul B., Armacost, Michael D., Cui, Zhenjiang, Shek, Meiyee, Li, Siyi
• Application Number:
  US12/257,137
• Publication Number:
  US 20090286402A1
• Time in Patent Office: Days
• US Class Current: 438/703
• CPC Class Codes: H01L 21/02112 characterised by the material of the layer
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/0338 Process specially adapted to improve the resolution of the mask
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence
• CPC Class Codes: H01L 21/318 composed of nitrides
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00

Abstract

A method and apparatus for forming narrow vias in a substrate is provided. A pattern recess is etched into a substrate by conventional lithography. A thin conformal layer is formed over the surface of the substrate, including the sidewalls and bottom of the pattern recess. The thickness of the conformal layer reduces the effective width of the pattern recess. The conformal layer is removed from the bottom of the pattern recess by anisotropic etching to expose the substrate beneath. The substrate is then etched using the conformal layer covering the sidewalls of the pattern recess as a mask. The conformal layer is then removed using a wet etchant.

Claims

1. A method of reducing critical dimension of a recess having sidewalls and a bottom portion formed in a substrate having a field region, comprising:

applying a conformal layer over the field region, sidewalls, and bottom portion;

removing the conformal layer from the bottom portion by a directional etch process to expose the substrate;

etching the exposed substrate at the bottom portion; and

removing the conformal layer by a wet etch process.

2. The method of claim 1, wherein the conformal layer is a barrier layer.

3. The method of claim 1, wherein the recess is formed by patterning a pattern transfer layer of the substrate.

4. The method of claim 1, wherein the conformal layer is a nitrogen containing barrier layer.

5. The method of claim 1, wherein the directional etch process also removes the conformal layer from the field region.

6. The method of claim 1, wherein the conformal layer is a nitride layer.

7. The method of claim 1, wherein the conformal layer is deposited by a PECVD process.

8. The method of claim 1, wherein the conformal layer comprises elements selected from the group consisting of boron, silicon, nitrogen, oxygen, and combinations thereof.

9. The method of claim 1, wherein the conformal layer comprises a material having a low etch rate when exposed to etchants selected to etch the substrate.

10. The method of claim 1, wherein removing the conformal layer by a wet etch process comprises exposing the conformal layer to an aqueous solution.

11. The method of claim 1, wherein the substrate comprises a dielectric layer and a pattern transfer layer.

12. The method of claim 11, wherein the recess is formed by transferring a pattern from the pattern transfer layer to the dielectric layer.

13. The method of claim 12, further comprising removing the pattern transfer layer.

14. The method of claim 1, wherein the directional etch process comprises forming a plasma from an etchant gas and applying an electrical bias to the substrate.

15. A method of forming a via in a field region of a substrate, comprising:

patterning a layer formed on a surface of the substrate to form a recess having sidewalls and a bottom portion;

reducing the width of the recess by applying a conformal film over the layer;

forming a reduced critical dimension area by removing the conformal film from the bottom portion of the recess to expose a portion of the substrate; and

etching the reduced critical dimension area to form the via.

16. The method of claim 15, wherein the layer is an amorphous carbon layer.

17. The method of claim 15, wherein the conformal film is a nitrogen containing film.

18. The method of claim 15, wherein removing the conformal film comprises exposing the film to a plasma of an etchant gas and applying an electrical bias to the substrate.

19. The method of claim 15, further comprising removing the conformal film by a wet etch process.

20. The method of claim 19, wherein removing the conformal film by a wet etch process comprises exposing the conformal film to an aqueous solution.

21. The method of claim 20, wherein the aqueous solution comprises an oxidizing solution.

22. A method of patterning a dielectric layer formed on a substrate, comprising:

forming a pattern transfer layer over the dielectric layer;

patterning the pattern transfer layer by applying a photoresist, patterning the photoresist, and etching the pattern into the pattern transfer layer to form a recess having a bottom portion;

depositing a first conformal layer over the pattern transfer layer;

removing the first conformal layer from the bottom portion of the recess to expose the dielectric layer;

etching the exposed portion of the dielectric layer to form a narrow recess;

removing the pattern transfer layer and the conformal layer;

depositing a second conformal layer over the substrate; and

removing the second conformal layer from the bottom portion of the narrow recess.

23. The method of claim 22, wherein the first conformal layer is a nitrogen containing layer.

24. The method of claim 23, wherein the second conformal layer is a oxygen containing layer.