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GROUP III NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE AND PRODUCTION METHOD THEREOF

  • US 20090289270A1
  • Filed: 05/19/2009
  • Published: 11/26/2009
  • Est. Priority Date: 05/23/2008
  • Status: Abandoned Application
First Claim
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1. A Group III nitride semiconductor multilayer structure obtained by layering an n-type semiconductor layer, composed of a Group III nitride semiconductor, a luminescent layer and a p-type semiconductor layer, on a sapphire substrate, the Group III nitride semiconductor multilayer structure being characterized by having an AlN crystal film that is accumulated as the seed layer by sputtering on the sapphire substrate surface, the AlN crystal film having a grain boundary spacing of 200 nm or greater.

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