SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a first insulator and a second insulator provided so as to face each other;
a semiconductor integrated circuit and an antenna provided over the semiconductor integrated circuit sealed by the first insulator and the second insulator; and
a conductive material covering an outer surface of the first insulator and an outer surface of the second insulator.
1 Assignment
0 Petitions
Accused Products
Abstract
A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown of the semiconductor integrated circuit (e.g., malfunction of a circuit and damage to a semiconductor element) due to electrostatic discharge. Further, with use of a pair of insulators between which the semiconductor integrated circuit is sandwiched, a highly reliable semiconductor having resistance can be provided while achieving reduction in the thickness and size. Moreover, also in the manufacturing process, external stress, or defective shapes or deterioration in characteristics resulted from electrostatic discharge are prevented, and thus the semiconductor device can be manufactured with high yield.
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Citations
37 Claims
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1. A semiconductor device comprising:
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a first insulator and a second insulator provided so as to face each other; a semiconductor integrated circuit and an antenna provided over the semiconductor integrated circuit sealed by the first insulator and the second insulator; and a conductive material covering an outer surface of the first insulator and an outer surface of the second insulator. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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2. A semiconductor device comprising:
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a first insulator and a second insulator provided so as to face each other; a semiconductor integrated circuit and a first antenna provided over the semiconductor integrated circuit sealed by the first insulator and the second insulator; a conductive material covering an outer surface of the first insulator and an outer surface of the second insulator; and a second antenna electromagnetically connected to the first antenna. - View Dependent Claims (3, 4, 17)
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18. A semiconductor device comprising:
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a first insulator and a second insulator provided so as to face each other wherein the first insulator has a first surface facing the second insulator and a second surface facing in an opposite direction from the first surface and wherein the second insulator has a third surface facing to the first insulator and a fourth surface facing an opposite direction from the third surface; a semiconductor integrated circuit between the first insulator and the second insulator; an antenna between the semiconductor integrated circuit and the first insulator; a first conductive layer in contact with the second surface of the first insulator; and a second conductive layer in contact with the fourth surface of the second insulator, wherein at least of one of the first conductive layer and the second conductive layer is in contact with a side surface of the first insulator and a side surface of the second insulator, and wherein the side surface of the first insulator is coplanar with the side surface of the second insulator. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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19. A semiconductor device comprising:
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a first insulator and a second insulator provided so as to face each other wherein the first insulator has a first surface facing the second insulator and a second surface facing in an opposite direction from the first surface and wherein the second insulator has a third surface facing the first insulator and a fourth surface facing an opposite direction from the third surface; a semiconductor integrated circuit between the first insulator and the second insulator; a first antenna between the semiconductor integrated circuit and the first insulator; a first conductive layer in contact with the second surface of the first insulator; a second conductive layer in contact with the fourth surface of the second insulator; and a second antenna electromagnetically connected to the first antenna, wherein at least of one of the first conductive layer and the second conductive layer is in contact with a side surface of the first insulator and a side surface of the second insulator, and wherein the side surface of the first insulator is coplanar with the side surface of the second insulator. - View Dependent Claims (20, 21, 34)
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35. A method for manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor integrated circuit over a substrate with a separation layer interposed therebetween; forming an antenna over the semiconductor integrated circuit; bonding a first insulator to the semiconductor integrated circuit with the antenna interposed therebetween; separating the semiconductor integrated circuit and the antenna from the substrate; bonding the semiconductor integrated circuit and the antenna to a second insulator; cutting off the first insulator and the second insulator so as to seal the semiconductor integrated circuit and the antenna; forming a first conductive layer in contact with the first insulator; and forming a second conductive layer in contact with the second insulator, wherein an outer surface of the first insulator and an outer surface of the second insulator are covered with the first conductive layer and the second conductive layer. - View Dependent Claims (36, 37)
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Specification