SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a first insulator having a first surface and a second surface opposite to the first surface;
a second insulator having a third surface and a fourth surface opposite to the third surface so that the first surface and the third surface face each other;
a semiconductor integrated circuit;
an antenna,wherein the semiconductor integrated circuit and the antenna are provided between the first insulator and the second insulator;
a first conductive layer provided on the second surface of the first insulator; and
a second conductive layer provided on the fourth surface of the second insulator,wherein the first conductive layer and the second conductive layer are electrically connected.
1 Assignment
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Accused Products
Abstract
An object is to provide a highly reliable semiconductor device having resistance to external stress and electrostatic discharge while achieving reduction in thickness and size. Another object is to prevent defective shapes and deterioration in characteristics due to external stress or electrostatic discharge in a manufacture process to manufacture a semiconductor device with a high yield. A first insulator and a second insulator facing each other, a semiconductor integrated circuit and an antenna provided between the first insulator and the second insulator facing each other, a conductive shield provided on one surface of the first insulator, and a conductive shield provided on one surface of the second insulator are provided. The conductive shield provided on one surface of the first insulator and the conductive shield provided on one surface of the second insulator are electrically connected.
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Citations
27 Claims
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1. A semiconductor device comprising:
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a first insulator having a first surface and a second surface opposite to the first surface; a second insulator having a third surface and a fourth surface opposite to the third surface so that the first surface and the third surface face each other; a semiconductor integrated circuit; an antenna, wherein the semiconductor integrated circuit and the antenna are provided between the first insulator and the second insulator; a first conductive layer provided on the second surface of the first insulator; and a second conductive layer provided on the fourth surface of the second insulator, wherein the first conductive layer and the second conductive layer are electrically connected. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a first insulator; a second insulator; a semiconductor integrated circuit; an antenna, wherein the semiconductor integrated circuit and the antenna are provided between the first insulator and the second insulator facing each other; a first conductive layer provided on one surface of the first insulator; and a second conductive layer provided on one surface of the second insulator, wherein the first conductive layer and the second conductive layer are electrically connected. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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a first insulator; a second insulator; a semiconductor integrated circuit; a first antenna electrically connected to the semiconductor integrated circuit, wherein the semiconductor integrated circuit and the first antenna are provided between the first insulator and the second insulator; a first conductive layer provided on one surface of the first insulator; a second conductive layer provided on one surface of the second insulator; and a second booster antenna electromagnetically coupled with the first antenna, wherein the first conductive layer and the second conductive layer are electrically connected. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification