PHOTOVOLTAICS WITH INTERFEROMETRIC MASKS

• US 20090293955A1
• Filed: 12/04/2007
• Published: 12/03/2009
• Est. Priority Date: 11/07/2007
• Status: Abandoned Application

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm, Inc.
• Inventors: Khazeni, Kasra, Kothari, Manish
• Application Number:
  US11/950,392
• Publication Number:
  US 20090293955A1
• Time in Patent Office: Days
• US Class Current: 136/259
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: G02B 5/285 comprising deposited thin solid films G02B5/281 - G02B5/289 take precedence; multilayered film filters for fibre optic multiplexing G02B6/29361
• CPC Class Codes: H01L 31/02168 the coatings being antireflective or having enhancing optical properties for the solar cells
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

An interferometric mask covering the front electrodes of a photovoltaic device is disclosed. Such an interferometric mask may reduce reflections of incident light from the electrodes. In various embodiments, the mask reduces reflections so that a front electrode pattern appears similar in color to adjacent regions of visible photovoltaic active material.

Claims

1. A photovoltaic device defining a front side on which light is incident and a back side opposite the front side, the photovoltaic device comprising:

a photovoltaic active layer;

a conductor on the front side of the photovoltaic active layer; and

an interferometric mask patterned to cover the front side of the conductor.

2. The device of claim 1, wherein the interferometric mask is configured such that a color of light reflected from the front side of the interferometric mask substantially matches a color of the photovoltaic active layer visible in regions adjacent the conductor.

3. The device of claim 1, wherein the interferometric mask is configured such that little or no incident visible light is reflected from the front side of the interferometric mask such that the interferometric mask appears black from a normal viewing angle.

4. The device of claim 1, wherein the interferometric mask is configured such that the reflectivity of the interferometric mask is less than 10%.

5. The device of claim 1, wherein the conductor comprises a bus connecting electrodes for a plurality of photovoltaic cells in an array.

6. The device of claim 1, wherein the conductor comprises an electrode in electrical contact with the photovoltaic active layer.

7. The device of claim 1, wherein the interferometric mask comprises an absorber over an optical resonant cavity over the conductor.

8. The device of claim 7, wherein the optical resonant cavity comprises an air gap formed by posts separating the absorber from the conductor.

9. The device of claim 8, wherein the height of the air gap is between about 450 Å

and 1600 Å

.

10. The device of claim 7, wherein the optical resonant cavity comprises a layer of dielectric material.

11. The device of claim 10, wherein the thickness of the dielectric material is between about 300 Å

and 1000 Å

12. The device of claim 10, wherein the dielectric layer has an index of refraction between about 1 and 3.

13. The device of claim 10, wherein the dielectric layer is a blanket layer extending across the photovoltaic device.

14. The device of claim 7, further comprising a passivation layer over the absorber.

15. The device of claim 14, wherein the passivation layer comprises silicon dioxide.

16. The device of claim 1, wherein the photovoltaic active layer is selected from the group consisting of single crystal silicon, amorphous silicon, germanium, III-V semiconductor, copper indium gallium selenide, cadmium telluride, gallium arsenide, indium nitride, gallium nitride, boron arsenide, indium gallium nitride, and tandem multi-junction photovoltaic materials.

17. The device of claim 1, wherein the photovoltaic active layer comprises a thin film photovoltaic material.

18. The device of claim 17, wherein the thin film comprises amorphous silicon.

19. The device of claim 17, wherein the thin film is formed over the back side of a transparent substrate, over the interferometric mask and over the conductor.

20. The device of claim 19, wherein the conductor is in electrical contact with the photovoltaic material through a transparent conducting oxide (TCO).

21. The device of claim 17, wherein the thin film is formed over the back side of a transparent substrate and over the conductor, and the interferometric mask is formed and patterned over the front side of the transparent substrate.

22. The device of claim 21, wherein the interferometric mask comprises an active MEMS device having a reflector on the front side of the transparent substrate.

23. The device of claim 1, wherein the photovoltaic active layer comprises an interferometrically enhanced photovoltaic device.

24. The device of claim 1, wherein the interferometric mask comprises an active MEMS device.

25. A photovoltaic device defining a front side on which light is incident and a back side opposite the front side, the photovoltaic device comprising:

a photovoltaic material;

a conductor in front of the photovoltaic material; and

an optical interferometric mask in front of the photovoltaic material and the conductor, wherein the mask comprises

a reflective surface in front of the photovoltaic material;

an optical resonant cavity in front of the reflective surface; and

an absorber in front of the optical resonant cavity, wherein a visible color across the front side of the photovoltaic device, including portions of the photovoltaic material and the metallic conductor, is substantially uniform.

26. The device of claim 25, wherein the optical resonant cavity comprises a composite of two or more of an air gap, a transparent conducting layer and a transparent dielectric layer.

27. The device of claim 25, wherein the optical interferometric mask is configured such that little or no incident visible light is reflected such that the photovoltaic device appears black.

28. The device of claim 27, wherein the optical interferometric mask is patterned to cover the metallic conductor and expose portions of the photovoltaic material.

29. The device of claim 25, wherein one or more layers of the optical interferometric mask and the conductor is screen printed.

30. The device of claim 25, wherein the conductor is transparent.

31. The device of claim 25, wherein reflective surface is defined by the conductor.

32. A photovoltaic device comprising:

means for generating an electrical current from incident light on an incident side of said means;

means for conducting the generated electrical current; and

means for interferometrically masking said conducting means from the incident side of the photovoltaic device.

33. The device of claim 32, wherein the mean for generating the electrical current comprises a semiconductor photovoltaic active material.

34. The device of claim 32, wherein the means for conducting comprises a reflective, patterned front electrode in electrical contact with the means for generating electrical current.

35. The device of claim 32, wherein the means for interferometrically masking comprises a stack including an optical resonant cavity and an absorber over the mean for conducting, configured to interferometrically reduce reflectivity from the means for conducting.

36. A method of manufacturing a photovoltaic device, comprising

providing a photovoltaic generator with a photovoltaic active layer, a patterned front side conductor and a backside conductor;

forming a plurality of layers over a front side of the photovoltaic generator; and

patterning one or more of the plurality of layers to define an interferometric modulator covering the patterned front side conductor.

37. The method of claim 36, wherein forming the plurality of layers comprises forming an absorber and an optical resonant cavity configured to reflect visible light substantially matching a visible spectrum reflected by exposed portions of the photovoltaic active layer.

38. The method of claim 37, wherein the interferometric modulator is configured to appear black from the front side.

39. The method of claim 37, wherein forming the interferometric cavity comprises forming an absorber and a dielectric layer.

40. The method of claim 39, wherein patterning comprises patterning the absorber and the dielectric layer.

41. The method of claim 39, wherein patterning comprises patterning the absorber to follow a pattern of the patterned front side conductor and leaving the dielectric layer as a blanket layer.

42. The method of claim 36, wherein patterning comprises forming the interferometric modulator coextensively with the front side conductor.

43. The method of claim 42, wherein providing the photovoltaic device comprises patterning the front side conductor simultaneously with patterning one or more of the plurality of layers.

44. The method of claim 36, wherein forming and patterning the plurality of layers comprises screen printing the plurality of layers in a pattern that follows the patterned front side conductor.

45. The method of claim 37, wherein forming an optical resonant cavity comprises forming an air gap and a spacer.

46. A method of manufacturing a photovoltaic device having a front side on which light is incident and a back side opposite the front side, the method comprising forming an interferometric modulator configured to appear black over the front side of the photovoltaic device.

47. The method of claim 46, wherein the photovoltaic device comprises a front side reflective conductor, and forming the interferometric modulator comprises forming an absorber, an optical resonant cavity, and a conductor, wherein the absorber and the optical resonant cavity are patterned to follow a pattern of the reflective conductor.

48. The method of claim 47, wherein forming the patterned absorber and optical resonant cavity comprises screen printing.

49. The method of claim 47, wherein the photovoltaic device is formed on a transparent substrate having opposing sides such that the front side reflective conductor and the interferometric modulator are formed on opposing sides of the transparent substrate.

50. The method of claim 46, wherein the photovoltaic device comprises a front side reflective conductor, and forming the interferometric modulator comprises forming an absorber, an optical resonant cavity, and a conductor, wherein the absorber is patterned to follow a pattern of the reflective conductor.