PROCESS FOR FABRICATING HIGH DENSITY STORAGE DEVICE WITH HIGH-TEMPERATURE MEDIA

• US 20090294028A1
• Filed: 06/03/2008
• Published: 12/03/2009
• Est. Priority Date: 06/03/2008
• Status: Abandoned Application

• Current Assignee: Nanochip, Inc.
• Original Assignee: Nanochip, Inc.
• Inventors: Zhu, Terry, Rapp, Zebulah Nathan, Heck, John, Belov, Nickolai
• Application Number:
  US12/132,139
• Publication Number:
  US 20090294028A1
• Time in Patent Office: Days
• US Class Current: 156/153
• CPC Class Codes: B32B 2457/14 Semiconductor wafers
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11B 9/02 using ferroelectric record carriers; Record carriers therefor
• CPC Class Codes: G11B 9/1463 Record carriers for recording or reproduction involving the use of microscopic probe means

Abstract

A method of fabricating an information storage device comprises providing a media substrate including a first side and a second side, forming a media on the first side of the media substrate, adhesively associating the media with a carrier substrate, thinning a surface of the second side of the media substrate while supporting and protecting the media with the carrier substrate, and forming circuitry on the thinned second side of the media substrate.

Claims

1. A method of fabricating an information storage device comprising:

providing a media substrate including a first side and a second side;

forming a media on the first side of the media substrate;

adhesively associating the media with a carrier substrate;

thinning a surface of the second side of the media substrate while supporting and protecting the media with the carrier substrate; and

forming circuitry on the thinned second side of the media substrate.

2. The method of claim 1, further comprising:

bonding a cap to the thinned second side of the media substrate; and

disassociating the media substrate from the carrier substrate.

3. The method of claim 2, further comprising:

defining a movable platform in the media substrate for urging a portion of the media; and

bonding the media substrate to a tip substrate so that the movable platform is arranged between the cap and the tip substrate.

4. The method of claim 3, further comprising:

exposing bond pads of the media substrate electrically connected with the circuitry; and

exposing bond pads of the tip substrate electrically connected with the tip substrate.

5. The method of claim 1, wherein forming the media on a media substrate further comprises:

forming a media stack including one or more layers of strontium titanate, strontium ruthenate and lead zirconate titanate.

6. The method of claim 5, wherein forming the media on a media substrate further comprises:

patterning one or more layers of the media stack.

7. The method of claim 1, wherein forming the media on a media substrate further comprises defining stand-offs capable of spacing the media from a parallel surface arranged in opposition of the media.

8. The method of claim 1, wherein adhesively associating the media with a carrier substrate includes reversibly bonding the media to the carrier substrate using an adhesive selected from one or more of a polymeric material, a thermoplastic material, and wax.

9. The method of claim 1, wherein thinning a surface of the second side of the media substrate includes one or more of grinding, polishing, and etching.

10. The method of claim 1,

wherein forming circuitry on the thinned second side of the media substrate includes forming and patterning a conductive material on the thinned surface;

and

wherein the circuitry includes components chosen from a set of;

signal routing traces, one or more capacitive sensor plates, and one or more electromagnetic motor traces.

11. The method of claim 2, wherein the cap is bonded to the thinned second side of the media substrate by forming an alloy.

12. The method of claim 3, wherein the media substrate is bonded to the tip substrate by forming an alloy having a melting temperature.

13. The method of claim 12, wherein the alloy is formed during bonding process by liquifying at least one component participating in the alloy formation and the liquification occurs at a temperature lower than the melting temperature of the alloy formed as a result of the bonding process.

14. The method of claim 12, wherein the alloy is one of a gold-indium alloy, a gold-tin alloy, a copper-tin alloy, a gold-silicon alloy, and a gold-germanium alloy.

15. The method of claim 3, wherein defining a movable platform in the media and the media substrate for urging a portion of the media includes patterning and etching the media and the media substrate to define suspension structures connected between a portion of the media and the media substrate and an outer frame of the media and media substrate within which the portion is suspended.

16. The method of claim 1, wherein the circuitry is formed on the thinned surface at a temperature lower than a melting temperature of an adhesion layer between the media and the carrier substrate.

17. A method of fabricating an information storage device comprising:

providing a first substrate having two sides, side one and opposite side two.

laying out a movable platform and a frame in a first substrate so that the movable platform is nested within the frame;

forming a media on the side one of the first substrate;

removably bonding the side one of the first substrate with a second substrate;

thinning a surface of the side two of the first substrate while supporting the media with the second substrate; and

forming circuitry on the thinned surface of the first substrate;

bonding a third substrate to a portion of the thinned surface of the first substrate associated with the frame;

disassociating the media from the second substrate.

forming the movable platform within the first substrate for urging a portion of the media; and

bonding the frame of the first substrate from side one to a fourth substrate including a plurality of tips so that the movable platform is accessible to tips and arranged between the third substrate and the fourth substrate.

18. The method of claim 17, wherein forming the media on a first substrate further comprises:

forming a media stack including one or more layers of strontium titanate, strontium ruthenate and lead zirconate titanate.

19. The method of claim 18, wherein forming the media on a first substrate further comprises:

patterning one or more layers of the media stack.

20. The method of claim 17, wherein the third substrate is bonded to the portion of the thinned surface of the first substrate by forming an alloy having a melting temperature and wherein the fourth substrate is bonded to the frame of the first substrate at a temperature lower than the melting temperature of the alloy.